Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETs [0.03%]
基于InGaAs/InAs/InGaAs异质结的电子空穴双层隧道FET的设计优化与分析
Jae Hwa Seo,Young Jun Yoon,Seongjae Cho et al.
Jae Hwa Seo et al.
In this study, we have designed and analyzed the electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) based on various III-V compound semiconductor materials using two-dimensional (2-D) technology computer-aided design (TC...
Polysilicon-Based Synaptic Transistor and Array Structure for Short/Long-Term Memory [0.03%]
基于多晶硅的突触晶体管及长短时记忆结构
Myung-Hyun Baek,Taejin Jang,Min-Woo Kwon et al.
Myung-Hyun Baek et al.
In this paper, we proposed and fabricated a polysilicon-based four-terminal synaptic transistor. The device has an asymmetric dual-gate structure. The top gate, which uses a thin SiO₂ layer as the gate dielectric, is the input terminal of ...
Nonvolatile Memory (NVM) Operation of Tunnel Field-Effect Transistor (TFET) Using Ferroelectric HfO₂ Sidewall [0.03%]
基于铁电HfO₂侧墙隧道场效应晶体管的非易失性存储操作机制研究
Ryoongbin Lee,Kitae Lee,Sihyun Kim et al.
Ryoongbin Lee et al.
In this paper, we propose a new type of nonvolatile memory (NVM) device based on a tunnel field-effect transistor (TFETs) with Ferroelectric HfO₂ sidewall. By simply utilizing the ferroelectricity of orthorhombic HfO₂ and conventional sid...
Grayscale Image Recognition Using Spike-Rate-Based Online Learning and Threshold Adjustment of Neurons in a Thin-Film Transistor-Type NOR Flash Memory Array [0.03%]
基于 spike-rate 的在线学习和 Nor flash 存储器神经元阈值调整的灰度图像识别技术研究
Seongbin Oh,Chul-Heung Kim,Soochang Lee et al.
Seongbin Oh et al.
As a synaptic device, TFT-type NOR flash memory cell shows reasonable weight levels (50 levels for long-term potentiation (LTP) and 150 levels for long-term depression (LTD)) and large max/min ratio (═50) for synapse weight. Based on the m...
Unsupervised Online Learning With Multiple Postsynaptic Neurons Based on Spike-Timing-Dependent Plasticity Using a Thin-Film Transistor-Type NOR Flash Memory Array [0.03%]
基于脉冲时间依赖可塑性的非易失性薄层晶体管nor闪存阵列的无监督在线学习
Soochang Lee,Chul-Heung Kim,Seongbin Oh et al.
Soochang Lee et al.
We present a two-layer fully connected neuromorphic system based on a thin-film transistor (TFT)-type NOR flash memory array with multiple postsynaptic (POST) neurons. Unsupervised online learning by spike-timing-dependent plasticity (STDP)...
Effect of Microwave Annealing on the Interface Properties Between the Top Silicon and Buried Oxide Layers in Silicon-on-Insulator MOSFETs [0.03%]
微波退火对硅绝缘体上金属氧化物半导体场效应晶体管顶层硅与埋氧层界面性能的影响研究
Gi-Yong Lee,Won-Ju Cho
Gi-Yong Lee
In this paper, a post-annealing process that uses microwaves to remove the back-interface thermal damage at the interface between the top silicon layer and the buried oxide layer of a silicon-on-insulator (SOI) device caused during rapid th...
Effect of Interface Traps on the Device Performance of InGaAs-Based Gate-All-Around Tunneling Field-Effect Transistors [0.03%]
界面陷阱对基于InGaAs的环绕栅隧穿场效应晶体管器件性能的影响
Won Douk Jang,Young Jun Yoon,Min Su Cho et al.
Won Douk Jang et al.
The effect of interface traps on InGaAs-based vertical gate-all-around (GAA) tunneling field-effect transistors (TFETs) has been investigated using technology computer-aided design (TCAD) simulation. The interface traps distributed within d...
Investigation of Multi-Level Cell Characteristic in Amorphous Indium-Gallium-Zinc Oxide Thin-Film-Transistor Based 1T-1R Non-Volatile Memory Device [0.03%]
基于非晶铟镓锌氧化物薄膜晶体管的1T-1R型非易失性存储器件中多级存储特性的研究
Hyun-Seok Choi,Won-Ju Cho
Hyun-Seok Choi
In this work, we have implemented nonvolatile resistive random access memory (ReRAM) cells consisting of one transistor (1T) and one resistor (1R) configuration by integrating a high-performance InGaZnO (IGZO) thin-film-transistor (TFT) and...
Capacitorless One-Transistor Dynamic Random-Access Memory Based on Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Si/SiGe Heterojunction and Underlap Structure for Improvement of Sensing Margin and Retention Time [0.03%]
基于Si/SiGe异质结和底重叠结构的双栅金属氧化物半导体场效应晶体管的一-transistor动态随机存取存储器(capacitorless 1T-DRAM)以提高感应裕量和保持时间改善
Young Jun Yoon,Min Su Cho,Bo Gyeong Kim et al.
Young Jun Yoon et al.
We present a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on a Si/SiGe heterojunction double-gate MOSFET. In the proposed 1T-DRAM, the program process is based on band-to-band tunneling (BTBT) between gate 1 and...
Operational Characteristics of Various AlGaN/GaN High Electron Mobility Transistor Structures Concerning Self-Heating Effect [0.03%]
各种AlGaN/GaN高电子迁移率晶体管结构的自加热效应性能特征研究
Hyun-Jung Kim,Kyu-Won Jang,Hyun-Seok Kim
Hyun-Jung Kim
This study investigated DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) considering self-heating effect (SHE) with basic T-gate (BT), drain-side extended T-gate (DSET), and source-bridge FP (SBFP) structures. We a...