Effect of Microwave Annealing on the Interface Properties Between the Top Silicon and Buried Oxide Layers in Silicon-on-Insulator MOSFETs
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In this paper, a post-annealing process that uses microwaves to remove the back-interface thermal damage at the interface between the top silicon layer and the buried oxide layer of a silicon-on-insulator (SOI) device caused during rapid thermal annealing (RTA... ...
