Capacitorless One-Transistor Dynamic Random-Access Memory Based on Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Si/SiGe Heterojunction and Underlap Structure for Improvement of Sensing Margin and Retention Time
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We present a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on a Si/SiGe heterojunction double-gate MOSFET. In the proposed 1T-DRAM, the program process is based on band-to-band tunneling (BTBT) between gate 1 and gate 2 regions, and... ...
