Nonvolatile Memory (NVM) Operation of Tunnel Field-Effect Transistor (TFET) Using Ferroelectric HfO₂ Sidewall
{{output}}
In this paper, we propose a new type of nonvolatile memory (NVM) device based on a tunnel field-effect transistor (TFETs) with Ferroelectric HfO₂ sidewall. By simply utilizing the ferroelectricity of orthorhombic HfO₂ and conventional sidewall spacer techniq... ...
