Operational Characteristics of Various AlGaN/GaN High Electron Mobility Transistor Structures Concerning Self-Heating Effect
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This study investigated DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) considering self-heating effect (SHE) with basic T-gate (BT), drain-side extended T-gate (DSET), and source-bridge FP (SBFP) structures. We analyzed threshold vo... ...
