Investigation of Multi-Level Cell Characteristic in Amorphous Indium-Gallium-Zinc Oxide Thin-Film-Transistor Based 1T-1R Non-Volatile Memory Device
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In this work, we have implemented nonvolatile resistive random access memory (ReRAM) cells consisting of one transistor (1T) and one resistor (1R) configuration by integrating a high-performance InGaZnO (IGZO) thin-film-transistor (TFT) and an HfO₂ resistive ... ...
