Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETs
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In this study, we have designed and analyzed the electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) based on various III-V compound semiconductor materials using two-dimensional (2-D) technology computer-aided design (TCAD) simulations. A r... ...
