Active Region Formation of Nanoelectromechanical (NEM) Devices for Complementary-Metal-Oxide-Semiconductor-NEM Co-Integration [0.03%]
互补金属氧化物半导体纳米机电共集成器件的有源区形成方法
Tae Min Cha,Hyun Chan Jo,Hyug Su Kwon et al.
Tae Min Cha et al.
Considering the isotropic release process for nanoelectromechanical (NEM) devices, defining the specific sacrificial layer of the inter-metal-dielectric (IMD), i.e., the active region only for NEM devices, is one of the most important issue...
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond [0.03%]
化学气相沉积金刚石上AlGaN/GaN异质结构肖特基势垒二极管的热特性
Zin-Sig Kim,Hyung-Seok Lee,Sung-Bum Bae et al.
Zin-Sig Kim et al.
High electron mobility transistors (HEMTs) and Schottky barrier diodes (SBDs) based on AlGaN/GaN heterostructure have been widely studied for high-frequency and/or high-power application. Widely distributed substrates for the high performan...
High Efficiency Flip Chip-Based UV Emitter with Indium Tin Oxide Nano Grains/Al Reflector and Periodic Microhole Arrays [0.03%]
基于氧化锡纳米颗粒/铝反射镜和周期性微孔阵列的高效率flip chip紫外发射器
Beom-Rae Noh,Joon-Sung Kwon,Semi Oh et al.
Beom-Rae Noh et al.
We propose a high efficiency flip chip-based ultraviolet (UV) emitter with aluminum (Al) reflector that includes indium tin oxide (ITO) nano grains for current injection between the Al and p-AlGaN layer. Al has attracted attention as a refl...
Dong Hun Lee,Myung-Hyun Lee
Dong Hun Lee
In straight long-range surface plasmon polariton (LR-SPP) waveguides with a gap (G-SPPWs), an excited input SPP propagates, jump overs the gap with low coupling loss, and propagates again, despite a micrometers-long gap. The micrometers lon...
Effects of Al Addition on Resistive-Switching Characteristics of Solution Processed Zn-Sn-O ReRAMs [0.03%]
Al添加对溶液法制备的Zn-Sn-O ReRAM电阻开关特性的影响
Tae-Wan Kim,Won-Ju Cho
Tae-Wan Kim
Resistive random access memory (ReRAM) using amorphous Al-doped zinc tin oxide (a-AZTO) as resistive switching layer was fabricated by solution based deposition method. The a-AZTO films with different compositions (Al:Zn:Sn 0:1:1, 0.1:1:1 a...
Kitae Lee,Junil Lee,Sihyun Kim et al.
Kitae Lee et al.
Ferroelectric tunnel field effect transistor (Fe-TFET) having improved DC performance in comparison to the conventional TFET (c-TFET) is proposed and investigated through the technology computer-aided design (TCAD) simulation. By inserting ...
Process-Induced Random Variation: Work-Function Variation in Stacked Nanowire Field Effect Transistor [0.03%]
工艺引入的随机变异：堆叠纳米线场效应晶体管中的功函数变异
Jinyoung Park,Changhwan Shin
Jinyoung Park
Using the technology computer-aided design (TCAD) tool, the impact of work function variation (WFV) in stacked nanowire field effect transistor (stacked NWFET) is investigated. To study the WFV-induced device performance variation, the meta...
Impact of Ferroelectric Capacitor's Electrode Area on the Performance of Negative Capacitance Field Effect Transistor [0.03%]
铁电电容器电极面积对负电容场效应晶体管性能的影响研究
Hyungki Cho,Jaemin Shin,Changhwan Shin
Hyungki Cho
To overcome the Boltzmann limit of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), negative (differential) capacitance FET (NCFET) has been under development since 2008. NCFET enables to implement the internal amplification of g...
Gate Voltage Dependence of Low Frequency Noise in Tunneling Field Effect Transistors [0.03%]
隧道场效应晶体管的低频噪声及其栅压依赖性
So-Yeong Kim,Hyeong-Sub Song,Sung-Kyu Kwon et al.
So-Yeong Kim et al.
In this paper, the dependency of low frequency noise as a function of the gate voltage was examined for tunneling field effect transistors (TFETs). When the level of gate voltage is low, the tunneling width of the TFETs is large. Thus, elec...
Peng Shasha,Ji Hyeon Kim,Sang Joon Park
Peng Shasha
Fluorescent carbon dots (CDs) have motivated a significant amount of research because of their properties such as excellent biocompatibility and low toxicity. In this work, water-soluble fluorescent CDs were synthesized from celery stalks b...