Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond
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High electron mobility transistors (HEMTs) and Schottky barrier diodes (SBDs) based on AlGaN/GaN heterostructure have been widely studied for high-frequency and/or high-power application. Widely distributed substrates for the high performance of RF application... ...
