Impact of Ferroelectric Capacitor's Electrode Area on the Performance of Negative Capacitance Field Effect Transistor
{{output}}
To overcome the Boltzmann limit of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), negative (differential) capacitance FET (NCFET) has been under development since 2008. NCFET enables to implement the internal amplification of gate voltage, resulti... ...
