Active Region Formation of Nanoelectromechanical (NEM) Devices for Complementary-Metal-Oxide-Semiconductor-NEM Co-Integration
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Considering the isotropic release process for nanoelectromechanical (NEM) devices, defining the specific sacrificial layer of the inter-metal-dielectric (IMD), i.e., the active region only for NEM devices, is one of the most important issue for complementary-m... ...
