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期刊名：Quality and reliability engineering international

缩写：QUAL RELIAB ENG INT

ISSN：0748-8017

e-ISSN：1099-1638

IF/分区：2.8/Q2

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共收录本刊相关文章索引2301条
Clinical Trial Case Reports Meta-Analysis RCT Review Systematic Review
Classical Article Case Reports Clinical Study Clinical Trial Clinical Trial Protocol Comment Comparative Study Editorial Guideline Letter Meta-Analysis Multicenter Study Observational Study Randomized Controlled Trial Review Systematic Review
Robust design of circuits susceptible to electromigration [0.03%]
Erik van Geest; Aarnout Brombacher; Otto Herrmann Erik van Geest; Aarnout Brombacher; Otto Herrmann
Quality and reliability engineering international. 1993;9(4):281-285. DOI:10.1002/qre.4680090407 1993
Electromigration, models and atomistic interpretation [0.03%]
Reiner Kirchheim Reiner Kirchheim
Quality and reliability engineering international. 1993;9(4):287-293. DOI:10.1002/qre.4680090408 1993
Electromigration early resistance increase measurements [0.03%]
J. Niehof; P. A. Flinn; T. J. Maloney J. Niehof; P. A. Flinn; T. J. Maloney
Quality and reliability engineering international. 1993;9(4):295-298. DOI:10.1002/qre.4680090409 1993
Electromigration in ALCu interconnections with W-plug contacts [0.03%]
L. Ferlazzo; G. Reimbold; J. P. Gonchond; M. Heitzmann; O. Demolliens; G. Lormand L. Ferlazzo; G. Reimbold; J. P. Gonchond; M. Heitzmann; O. Demolliens; G. Lormand
Quality and reliability engineering international. 1993;9(4):299-302. DOI:10.1002/qre.4680090410 1993
Thermoreflectance optical test probe for the measurement of current-induced temperature changes in microelectronic components [0.03%]
W. Claeys; S. Dilhaire; V. Quintard; J. P. Dom; Y. Danto W. Claeys; S. Dilhaire; V. Quintard; J. P. Dom; Y. Danto
Quality and reliability engineering international. 1993;9(4):303-308. DOI:10.1002/qre.4680090411 1993
On the use of DC measurements for ESD-related process monitoring [0.03%]
Jan Marc Luchies; Fred Kuper; Jan Verweij Jan Marc Luchies; Fred Kuper; Jan Verweij
Quality and reliability engineering international. 1993;9(4):309-313. DOI:10.1002/qre.4680090412 1993
Analysis of ESD protection networks for DMOS power transistors by means of static and time-resolved emission microscopy [0.03%]
Bruno Bonati; Athos Canclini; Marianna Cavone; Enrico Novarini; Paolo Pavan; Roberto Rivoir; Michele Stucchi; Enrico Zanoni Bruno Bonati; Athos Canclini; Marianna Cavone; Enrico Novarini; Paolo Pavan; Roberto Rivoir; Michele Stucchi; Enrico Zanoni
Quality and reliability engineering international. 1993;9(4):315-319. DOI:10.1002/qre.4680090413 1993
Breakdown characteristics of gate and tunnel oxides versus field and temperature [0.03%]
Christophe Monsérié; Patrick Mortini; Gérard Ghibaudo; Georges Pananakakis Christophe Monsérié; Patrick Mortini; Gérard Ghibaudo; Georges Pananakakis
Quality and reliability engineering international. 1993;9(4):321-324. DOI:10.1002/qre.4680090414 1993
A new approach to statistically modelling the time dependent oxide breakdown [0.03%]
R.-P. Vollertsen R.-P. Vollertsen
Quality and reliability engineering international. 1993;9(4):325-331. DOI:10.1002/qre.4680090415 1993
Limitations of oxide breakdown accelerated testing for reliability simulation [0.03%]
M. Nafría; J. Suñé; X. Aymerich M. Nafría; J. Suñé; X. Aymerich
Quality and reliability engineering international. 1993;9(4):333-336. DOI:10.1002/qre.4680090416 1993