Quality and reliability engineering international. 1993;9(4):315-319. doi: 10.1002/qre.4680090413 Q22.82025

Analysis of ESD protection networks for DMOS power transistors by means of static and time-resolved emission microscopy

Bruno Bonati; Athos Canclini; Marianna Cavone; Enrico Novarini; Paolo Pavan; Roberto Rivoir; Michele Stucchi; Enrico Zanoni

DOI: 10.1002/qre.4680090413

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期刊名：Quality and reliability engineering international

缩写：QUAL RELIAB ENG INT

ISSN：0748-8017

e-ISSN：1099-1638

IF/分区：2.8/Q2

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