Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications [0.03%]
HfO2基铁电场效应晶体管在内存计算应用中界面层工程与读取电压优化的协同方法研究
Yannick Raffel,Sourav De,Maximilian Lederer et al.
Yannick Raffel et al.
This article reports an improvement in the performance of the hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial layer (IL) engineering and READ-voltage optimization. ...
Origins of the Schottky Barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN Heterostructure [0.03%]
Au/Ni/GaN/AlGaN/GaN异质结构中二维电子气的肖特基势垒高度起源研究
Huy-Binh Do,Jinggui Zhou,Maria Merlyne De Souza
Huy-Binh Do
We report the influence of thickness of an undoped GaN (u-GaN) layer on current transport to a 2DHG through the metal/p++GaN contact in a GaN/AlGaN/GaN heterostructure. The current is dominated by an internal potential barrier of 0.2-0.27 e...
Gate Control of the Current-Flux Relation of a Josephson Quantum Interferometer Based on Proximitized Metallic Nanojuntions [0.03%]
基于受邻近效应影响的金属纳米级结节点的约瑟夫森量子干涉仪中电流磁通关系的调控机制研究
Giorgio De Simoni,Sebastiano Battisti,Nadia Ligato et al.
Giorgio De Simoni et al.
We demonstrate an Al superconducting quantum interference device in which the Josephson junctions are implemented through gate-controlled proximity Cu mesoscopic weak links. This specific kind of metallic weak links behaves analogously to g...
Spinterface Effects in Hybrid La0.7Sr0.3MnO3/SrTiO3/C60/Co Magnetic Tunnel Junctions [0.03%]
La0.7Sr0.3MnO3/SrTiO3/C60/Co磁性隧道结中的尖端效应
Ilaria Bergenti,Takeshi Kamiya,Dongzhe Li et al.
Ilaria Bergenti et al.
Orbital hybridization at the Co/C60 interface been has proved to strongly enhance the magnetic anisotropy of the cobalt layer, promoting such hybrid systems as appealing components for sensing and memory devices. Correspondingly, the same h...
A Correlative Study of Interfacial Segregation in a Cu-Doped TiNiSn Thermoelectric half-Heusler Alloy [0.03%]
一种Cu掺杂TiNiSn热电半海森伯合金界面偏聚的关联研究
John E Halpin,Benjamin Jenkins,Michael P Moody et al.
John E Halpin et al.
The performance of thermoelectric materials depends on both their atomic-scale chemistry and the nature of microstructural details such as grain boundaries and inclusions. Here, the elemental distribution throughout a TiNiCu0.1Sn thermoelec...
Alison C Twitchett-Harrison,James C Loudon,Ryan A Pepper et al.
Alison C Twitchett-Harrison et al.
Skyrmion-based devices have been proposed as a promising solution for low-energy data storage. These devices include racetrack or logic structures and require skyrmions to be confined in regions with dimensions comparable to the size of a s...
Flexible and Semi-Transparent Silicon Solar Cells as a Power Supply to Smart Contact Lenses [0.03%]
柔性和半透明的硅太阳能电池作为智能隐形眼镜的动力来源
Erfan Pourshaban,Aishwaryadev Banerjee,Adwait Deshpande et al.
Erfan Pourshaban et al.
Supplying electric power to wearable IoT devices, particularly smart contact lenses (SCLs), is one of the main obstacles to widespread adoption and commercialization. In the present study, we have successfully designed, fabricated, and char...
Benjamin McEwen,Michael A Reshchikov,Emma Rocco et al.
Benjamin McEwen et al.
Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor level...
Deep-UV Transparent Conducting Oxide La-Doped SrSnO3 with a High Figure of Merit [0.03%]
高优值深紫外透明导氧化物La掺杂SrSnO3
Juhan Kim,Hwanhui Yun,Jihoon Seo et al.
Juhan Kim et al.
Perovskite stannate SrSnO3 (SSO) is attracting attention as ultraviolet transparent conducting oxides (UV TCOs) due to its ultrawide band gap and high conductivity. Here, we investigate in detail the thickness-dependent electrical, structur...
Understanding the Anisotropy in the Electrical Conductivity of CuPtB-type Ordered GaInP Thin Films by Combining In Situ TEM Biasing and First Principles Calculations [0.03%]
结合透射电镜原位偏置和第一性原理计算理解CuPtB型有序GaInP薄膜电导各向异性
Gemma Martín,Catalina Coll,Lluís López-Conesa et al.
Gemma Martín et al.
In this work, the effect of CuPtB ordering on the optoelectronic properties of Ga0.5In0.5P is studied by combining in situ transmission electron microscopy measurements and density functional theory (DFT) calculations. GaInP layers were gro...