Origins of the Schottky Barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN Heterostructure
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We report the influence of thickness of an undoped GaN (u-GaN) layer on current transport to a 2DHG through the metal/p++GaN contact in a GaN/AlGaN/GaN heterostructure. The current is dominated by an internal potential barrier of 0.2-0.27 eV at the p+ GaN/u-Ga... ...
