Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications
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This article reports an improvement in the performance of the hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial layer (IL) engineering and READ-voltage optimization. FeFET devices with s... ...
