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期刊名:Journal of micro-nanolithography mems and moems

缩写:J MICRO-NANOLITH MEM

ISSN:1932-5150

e-ISSN:2708-8340

IF/分区:2.3/Q3

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共收录本刊相关文章索引15
Clinical Trial Case Reports Meta-Analysis RCT Review Systematic Review
Classical Article Case Reports Clinical Study Clinical Trial Clinical Trial Protocol Comment Comparative Study Editorial Guideline Letter Meta-Analysis Multicenter Study Observational Study Randomized Controlled Trial Review Systematic Review
Peter Bajcsy,Pushkar Sathe,Andras A Vladar Peter Bajcsy
Background: Nanoscale measurements of critical dimensions in semiconductor manufacturing rely on scanning electron microscopy (SEM) and SEM image analyses. The acquisition of SEM images requires a low primary electron bea...
Ronald G Dixson,Ndubuisi G Orji Ronald G Dixson
Since 2004 standards for calibration of critical dimension atomic force microscope (CD-AFM) tip width have been available both commercially and through national metrology institutes (NMIs) - such as the National Institute of Standards and T...
Mark-Alexander Henn,Bryan M Barnes,Hui Zhou Mark-Alexander Henn
Optical 3D nanostructure metrology utilizes a model-based metrology approach to determine critical dimensions (CDs) that are well below the inspection wavelength. Our project at the National Institute of Standards and Technology is evaluati...
Ronald Dixson Ronald Dixson
One type of atomic force microscopy (AFM) used for critical dimension (CD) metrology is commonly referred to as critical dimension atomic force microscopy (CD-AFM); it uses flared tips and two-dimensional surface sensing to enable scanning ...
Ndubuisi G Orji,Ronald G Dixson,Ernesto Lopez et al. Ndubuisi G Orji et al.
Nanoscale wear affects the performance of atomic force microscopy (AFM)-based measurements for all applications including process control measurements and nanoelectronics characterization. As such, methods to prevent or reduce AFM tip wear ...
Daniel F Sunday,R Joseph Kline Daniel F Sunday
Optimizing the extraction of information from x-ray measurements while minimizing exposure time is an important area of research in a variety of fields. The semiconductor industry is reaching a point where the traditional optical metrologie...
Andres Galan,Gregory P Nordin,Shiuh-Hua Wood Chiang Andres Galan
We demonstrate a hybrid "package-less" polydimethylsiloxane (PDMS)-complementary-metal-oxide-semiconductor (CMOS)-FR4 system for contact imaging. The system embeds the CMOS image sensor directly in a PDMS layer instead of the standard chip ...
Matthew Hamblin,Thane Downing,Sophia Anderson et al. Matthew Hamblin et al.
Methods exist for the creation of antireflective thin film layers; however, many of these methods depend on the use of high temperatures, harsh chemical etches, or are made with difficult pattern materials, rendering them unusable for many ...
Jinho Choi,Byong Chon Park,Sang Jung Ahn et al. Jinho Choi et al.
The decreasing size of semiconductor features and the increasing structural complexity of advanced devices have placed continuously greater demands on manufacturing metrology, arising both from the measurement challenges of smaller feature ...
Adam F Hannon,Daniel F Sunday,Donald Windover et al. Adam F Hannon et al.
We compare the speed and effectiveness of two genetic optimization algorithms to the results of statistical sampling via a Markov chain Monte Carlo algorithm to find which is the most robust method for determining real space structure in pe...