Journal of materials science-materials in electronics文章索引

期刊目录筛选

期刊名：Journal of materials science-materials in electronics

缩写：J MATER SCI-MATER EL

ISSN：0957-4522

e-ISSN：1573-482X

IF/分区：3.2/Q2

文章目录更多期刊信息

共收录本刊相关文章索引3980条

The roles of “free” and “trapped” charges in single-crystal rubrene organic field-effect transistors [0.03%] 单晶红荧烯有机场效应晶体管中“自由”电荷与“束缚”电荷的作用

H. L. Kwok H. L. Kwok

Journal of materials science-materials in electronics. 2010;21(6):535-539. DOI:10.1007/s10854-009-9953-9 2010

Luminescence characterization of ultrathin MgO films of high crystallinity prepared by pulsed laser deposition [0.03%] 脉冲激光沉积制备的高结晶度超薄MgO薄膜的发光特性表征

Eduard Feldbach; Raivo Jaaniso; Margus Kodu; Viktor P. Denks; Aarne Kasikov; Peeter Liblik; Aarne Maaroos; Hugo Mändar; Marco Kirm Eduard Feldbach; Raivo Jaaniso; Margus Kodu; Viktor P. Denks; Aarne Kasikov; Peeter Liblik; Aarne Maaroos; Hugo Mändar; Marco Kirm

Journal of materials science-materials in electronics. 2009;20(1 Supplement):321-325. DOI:10.1007/s10854-008-9599-z 2009

Electrolytic capacitors produced from deformation-processed two-phase alloys [0.03%] 由变形处理的双相合金制成的电解电容器

E. D. Gibson; J. D. Verhoeven E. D. Gibson; J. D. Verhoeven

Journal of materials science-materials in electronics. 1991;2(4):236-243. DOI:10.1007/bf00702929 1991

Buffer-trapping effects on current slump in AlGaN/GaN HEMTs [0.03%] 缓冲阱效应对AlGaN/GaN HEMT电流下降的影响

Atsushi Nakajima; Kazushige Horio Atsushi Nakajima; Kazushige Horio

Journal of materials science-materials in electronics. 2008;19(8-9):735-739. DOI:10.1007/s10854-007-9399-x 2008

Photoresponse ofn-ZnO/p-Si heterojunction towards ultraviolet/visible lights: thickness dependent behavior [0.03%] n-ZnO/p-Si异质结对紫外/可见光的光电响应：厚度依赖性行为

S. Mridha; M. Dutta; Durga Basak S. Mridha; M. Dutta; Durga Basak

Journal of materials science-materials in electronics. 2009;20(1 Supplement):376-379. DOI:10.1007/s10854-008-9628-y 2009

Theoretical analysis of the membrane parameters of the fiber optic microphone [0.03%] 光纤麦克风膜片参数的理论分析

K. E. Aiadi; F. Rehouma; R. Bouanane K. E. Aiadi; F. Rehouma; R. Bouanane

Journal of materials science-materials in electronics. 2006;17(4):293-295. DOI:10.1007/s10854-006-6946-9 2006

SEM and specific contact resistance analysis of screen-printed Ag contacts formed by fire-through process on the shallow emitters of silicon solar cell [0.03%] 硅太阳能电池浅发射极上采用烧结工艺形成的丝网印刷银电极的扫描电子显微镜及特定接触电阻分析

P. N. Vinod P. N. Vinod

Journal of materials science-materials in electronics. 2009;20(10):1026-1032. DOI:10.1007/s10854-008-9815-x 2009

Ge/Si heterojunction photodetector for 1.064 [0.03%] 用于1.064的Ge/Si异质结光电探测器

Raid A. Ismail; Jospen Koshapa; Omar A. Abdulrazaq Raid A. Ismail; Jospen Koshapa; Omar A. Abdulrazaq

Journal of materials science-materials in electronics. 2006;17(8):643-646. DOI:10.1007/s10854-006-0012-5 2006

Impact of joint materials on the reliability of double-side packaged SiC power devices during high temperature aging [0.03%] 接合材料对双面封装碳化硅功率器件高温老化期间可靠性的影响

Fengqun Lang; Hiroshi Nakagawa; Masahiro Aoyagi; Hiromichi Ohashi; Hiroshi Yamaguchi Fengqun Lang; Hiroshi Nakagawa; Masahiro Aoyagi; Hiromichi Ohashi; Hiroshi Yamaguchi

Journal of materials science-materials in electronics. 2010;21(9):917-925. DOI:10.1007/s10854-009-0018-x 2010

Electrodeless growth of silver iodide nanowires in a polycarbonate membrane using chemical reaction [0.03%] 利用化学反应在聚碳酸酯膜中无电极生长碘化银纳米线

Sanjeev Kumar Sanjeev Kumar

Journal of materials science-materials in electronics. 2011;22(3):244-247. DOI:10.1007/s10854-010-0122-y 2011