Journal of materials science-materials in electronics. 2008;19(8-9):735-739. doi: 10.1007/s10854-007-9399-x Q23.22025
Buffer-trapping effects on current slump in AlGaN/GaN HEMTs
缓冲阱效应对AlGaN/GaN HEMT电流下降的影响
DOI: 10.1007/s10854-007-9399-x
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Journal of materials science-materials in electronics. 2008;19(8-9):735-739. doi: 10.1007/s10854-007-9399-x Q23.22025
DOI: 10.1007/s10854-007-9399-x
摘要 查看摘要