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Journal of materials science-materials in electronics. 2008;19(8-9):735-739. doi: 10.1007/s10854-007-9399-x Q23.22025

Buffer-trapping effects on current slump in AlGaN/GaN HEMTs

缓冲阱效应对AlGaN/GaN HEMT电流下降的影响

Atsushi Nakajima; Kazushige Horio

DOI: 10.1007/s10854-007-9399-x

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期刊名:Journal of materials science-materials in electronics

缩写:J MATER SCI-MATER EL

ISSN:0957-4522

e-ISSN:1573-482X

IF/分区:3.2/Q2

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Buffer-trapping effects on current slump in AlGaN/GaN HEMTs