Eutectic Formation, V/III Ratio and Controlled Polarity Inversion in Nitrides on Silicon[1] [0.03%]
硅衬底氮化物外延中的包克勒组织、V/III比值和极性倒置问题研究
Alexana Roshko,Matt D Brubaker,Paul T Blanchard et al.
Alexana Roshko et al.
The crystallographic polarity of AlN grown on Si(111) by plasma assisted molecular beam epitaxy is intentionally inverted from N-polar to Al-polar at a planar boundary. The position of the inversion boundary is controlled by a two-step grow...
Bi2Se3 van der Waals Virtual Substrates for II-VI Heterostructures [0.03%]
用于II-VI异质结构的Bi2Se3范德华虚拟衬底
Thor Axtmann Garcia,Vasilios Deligiannakis,Candice Forrester et al.
Thor Axtmann Garcia et al.
We report on the growth and characterization of optical quality multiple quantum well structures of Zn x Cd1-x Se/Zn x Cd y Mg1-x-y Se on an ultra-thin Bi2Se3/CdTe virtual substrate on c-plane Al2O3 (sapphire). Excellent quality highly orie...
Thor A Garcia,Joel De Jesus,Arvind P Ravikumar et al.
Thor A Garcia et al.
We present the growth and characterization of ZnCdSe/ZnCdMgSe quantum cascade (QC) heterostructures grown by molecular beam epitaxy (MBE) and designed to operate at 6-8μm. These structures utilize the better-understood ZnCdMgSe with InP la...
The influence of the structure of the Au(110) surface on the ordering of a monolayer of cytochrome P450 reductase at the Au(110)/phosphate buffer interface [0.03%]
Au（110）表面结构对Au（110）/磷酸盐缓冲液界面上细胞色素P450还原酶单层有序性的影响
C I Smith,J H Convery,B Khara et al.
C I Smith et al.
The reflection anisotropy spectra (RAS) observed initially from Au(110)/phosphate buffer interfaces at applied potentials of -0.652 and 0.056 V are very similar to the spectra observed from ordered Au(110) (1 × 3) and anion induced (1 × 1...
Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon [0.03%]
在图案化(113)硅衬底上外延低缺陷大尺寸半极性(11[Formula: see text]2)GaN薄膜
Markus Pristovsek,Yisong Han,Tongtong Zhu et al.
Markus Pristovsek et al.
We report on the growth of semi-polar GaN (11[Formula: see text]2) templates on patterned Si (113) substrates. Trenches were etched in Si (113) using KOH to expose Si {111} sidewalls. Subsequently an AlN layer to prevent meltback etching, a...
Approaching an organic semimetal: Electron pockets at the Fermi level for a p-benzoquinonemonoimine zwitterion [0.03%]
接近有机半金属态：p-苯醌单亚胺两性离子费米能级上的电子袋结构
Luis G Rosa,Julian Velev,Zhengzheng Zhang et al.
Luis G Rosa et al.
There is compelling evidence of electron pockets, at the Fermi level, in the band structure for an organic zwitterion molecule of the p-benzoquinonemonoimine type. The electronic structure of the zwitterion molecular film has a definite, al...