Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon
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We report on the growth of semi-polar GaN (11[Formula: see text]2) templates on patterned Si (113) substrates. Trenches were etched in Si (113) using KOH to expose Si {111} sidewalls. Subsequently an AlN layer to prevent meltback etching, an AlGaN layer for st... ...
