Impact of Arsenic- and Indium-Terminated InGaAs Stressors on Carrier Confinement, Strain, Defects, and Transport Properties of Tensile-Strained Ge [0.03%]
砷和铟掺杂的InGaAs应力层对张应变硅锗中载流子限制、缺陷及输运性质的影响研究
Sengunthar Karthikeyan,Rishav Khatiwada,Jean J Heremans et al.
Sengunthar Karthikeyan et al.
Device-quality tensile-strained Ge (ε-Ge) grown on a large bandgap semiconductor with superior electrical and optical carrier confinement is essential for group-IV-based optoelectronics. Properties of ε-Ge active layers synthesized on In0...
Correction to "Bis-PCBM-Containing Electrically Conducting Electron-Beam Resist for Nanometer-Scale Organic Devices" [0.03%]
对“含双PCBM的纳米级有机器件用电导电子束抗蚀剂”的改正
Anri Nakajima,Taisei Hanawa,Masafumi Mishima et al.
Anri Nakajima et al.
[This corrects the article DOI: 10.1021/acsaelm.4c02325.]. © 2025 The Authors. Published by American Chemical Society.
Published Erratum
ACS applied electronic materials. 2025 Nov 6;7(22):10498. DOI:10.1021/acsaelm.5c02180 2025
ZIF-71-Coated CuO:Al with Enhanced Gas-Sensing Performance for n‑Butanol and Hydrogen [0.03%]
用于检测n-丁醇和氢气的高性能CuO@ZIF-71涂层Al基气体传感器材料
Rajat Nagpal,Masaya Sugihara,Cristian Lupan et al.
Rajat Nagpal et al.
In this study, hybrid materials combine metal-organic framework (MOF)-zeolitic imidazolate framework (ZIF) with inorganic metal-oxide semiconductors, resulting in composite materials that exhibit synergistic properties and improves the sens...
Molecular Electronics Meets Direct-Write Carbon Nanofabrication via Focused Electron-Beam-Induced Deposition (FEBID): A Platform for Junction Architecture Design [0.03%]
基于聚焦电子束诱导沉积的分子电子器件直接写入及碳纳米加工技术：用于结点结构设计的平台
Aitor García-Serrano,Sara Sangtarash,Alejandro González-Orive et al.
Aitor García-Serrano et al.
The electrical characteristics of a molecular junction are highly sensitive to the nature and uniformity of the molecule|electrode contacts. This gives rise to significant interest in the development of not only the active molecular structu...
Electronic Properties and Stacking Ordering in Layered GeTe-Rich (GeTe) m (Sb2Te3) n [0.03%]
层状GeTe富集(GeTe)m|(Sb₂Te₃)n的电子性质和堆叠排序
Flavia Righi Riva,Stefano Cecchi,Simone Prili et al.
Flavia Righi Riva et al.
In this work, a study of the structural and electronic properties of epitaxial GeTe-rich (GeTe) m (Sb2Te3) n alloys grown on Si substrate by molecular beam epitaxy is presented, with particular focus on the effects of annealing at increasin...
All-Plastic Organic Lasers with Top-Layer Polymeric Resonators: Tunable Emission through Bending and Application to Refractive Index Sensing [0.03%]
全塑料有机激光器及其在曲面可调谐发光与感测中的应用
Pablo Pasqués-Gramage,Gema Calvillo-Solís,Pedro G Boj et al.
Pablo Pasqués-Gramage et al.
All-plastic thin-film organic lasers, in which all the layers comprising the device (active medium, resonator and substrate) are of polymeric nature, are very interesting because they offer the possibility to tune the emission laser wavelen...
Impact of Surface Treatments on the Transport Properties of Germanium 2DHGs [0.03%]
表面改性对锗二维hole气输运性质的影响研究
Nikunj Sangwan,Eric Jutzi,Christian Olsen et al.
Nikunj Sangwan et al.
Holes in planar germanium (Ge) heterostructures show promise for quantum applications, particularly in superconducting and spin qubits, due to strong spin-orbit interaction, low effective mass, and the absence of valley degeneracies. Howeve...
Laser Processing of Ti Contacts for Ohmic Behavior on P‑Type 4H-SiC [0.03%]
激光处理Ti电极在P型4H-SiC材料上形成欧姆接触
Roberto Vabres,Gabriele Bellocchi,Corrado Bongiorno et al.
Roberto Vabres et al.
This work explores a key challenge in power device fabrication: the formation of ohmic contacts on p-type 4H-silicon carbide (SiC). We demonstrate a selective, low thermal budget approach using single titanium (Ti) metallization combined wi...
Fast and Cost-Effective Fabrication of Ultrathin (20 μm) Silicon Substrates by Melt-Spinning [0.03%]
超快且低成本的熔融旋铸法制备20μm超薄单晶硅衬底技术
Hyung Woo Choi,Dhanesh Chandra,Ghassan Jabbour
Hyung Woo Choi
Thin silicon wafer fabrication is a crucial aspect of semiconductor manufacturing, offering enhanced material yield and reduced fabrication costs. Traditional techniques for producing thin silicon substrates often involve the use of support...
Influence of Channel Thickness and Counterion Composition on the Performance and Stability of Interdigitated Organic Electrochemical Transistors (OECTs) Using Electrochemically Deposited PEDOT [0.03%]
导电聚合物PEDOT电化学沉积厚度及-counter离子组成对指状有机 electrochemical transistor(OECT)性能与稳定性的影响
Junghyun Lee,Yuhang Wu,Quintin Baugh et al.
Junghyun Lee et al.
Organic electrochemical transistors (OECTs) prepared from poly-(3,4-ethylenedioxythiophene) (PEDOT) doped with poly-(styrenesulfonate) (PSS) have been widely investigated, typically with films prepared by spin-casting and drying from aqueou...