Electronic Properties and Stacking Ordering in Layered GeTe-Rich (GeTe) m (Sb2Te3) n
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In this work, a study of the structural and electronic properties of epitaxial GeTe-rich (GeTe) m (Sb2Te3) n alloys grown on Si substrate by molecular beam epitaxy is presented, with particular focus on the effects of annealing at increasing temperatures. The ... ...
