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期刊名:Acs applied electronic materials

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e-ISSN:2637-6113

IF/分区:4.7/Q2

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共收录本刊相关文章索引206
Clinical Trial Case Reports Meta-Analysis RCT Review Systematic Review
Classical Article Case Reports Clinical Study Clinical Trial Clinical Trial Protocol Comment Comparative Study Editorial Guideline Letter Meta-Analysis Multicenter Study Observational Study Randomized Controlled Trial Review Systematic Review
Simas Macionis,Dalius Gudeika,Dmytro Volyniuk et al. Simas Macionis et al.
The synthesis and optoelectronic properties of four simple-structure thioxanthone derivatives employing thioxanthone as an acceptor unit, coupled with moieties having very different electron-donating abilities such as phenoxazine, 3,6-di-te...
Omar Concepción,Nicolaj B Søgaard,Jin-Hee Bae et al. Omar Concepción et al.
Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In the case of Ge1-x Sn x alloys, the growth is particularly demanding since the lat...
Jingjia Meng,Jonathan M Goodwill,Evgheni Strelcov et al. Jingjia Meng et al.
Understanding the physical changes during electroformation and switching processes in transition-metal-oxide-based non-volatile memory devices is important for advancing this technology. Relatively few characteristics of these devices have ...
Keerthana Shajil Nair,Marco Holzer,Catherine Dubourdieu et al. Keerthana Shajil Nair et al.
The wake-up behavior and ON/OFF current ratio of TiN-Al2O3-Hf0.5Zr0.5O2-W ferroelectric tunnel junction (FTJ) devices were investigated for different wake-up voltage waveforms. We studied triangular and square waves, as well as square pulse...
Stefan Wert,Christian Iffelsberger,Akshay Kumar K Padinjareveetil et al. Stefan Wert et al.
Transition metal trichalcogenphosphites (MPX3), belonging to the class of 2D materials, are potentially viable electrocatalysts for the hydrogen evolution reaction (HER). Many 2D and layered materials exhibit different magnitudes of electro...
Niloufar Raeis-Hosseini,Dimitra G Georgiadou,Christos Papavassiliou Niloufar Raeis-Hosseini
[This corrects the article DOI: 10.1021/acsaelm.2c00979.]. © 2023 The Authors. Published by American Chemical Society.
Masud Rana Sk,Sunanda Thunder,David Lehninger et al. Masud Rana Sk et al.
Indium gallium zinc oxide (IGZO)-based ferroelectric thin-film transistors (FeTFTs) are being vigorously investigated for being deployed in computing-in-memory (CIM) applications. Content-addressable memories (CAMs) are the quintessential e...
Seunghyeb Ban,Yoon Jae Lee,Shinjae Kwon et al. Seunghyeb Ban et al.
Recent advances in wearable technologies have enabled ways for people to interact with external devices, known as human-machine interfaces (HMIs). Among them, electrooculography (EOG), measured by wearable devices, is used for eye movement-...
Rasa Keruckiene,Eimantas Vijaikis,Chia-Hsun Chen et al. Rasa Keruckiene et al.
Four emitters based on the naphthyridine acceptor moiety and various donor units exhibiting thermally activated delayed fluorescence (TADF) were designed and synthesized. The emitters exhibited excellent TADF properties with a small ΔE ST ...
Xiao Long,Huan Tan,Florencio Sánchez et al. Xiao Long et al.
The recent discovery of ferroelectricity in doped HfO2 has opened perspectives on the development of memristors based on ferroelectric switching, including ferroelectric tunnel junctions. In these devices, conductive channels are formed in ...