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Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions

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The recent discovery of ferroelectricity in doped HfO2 has opened perspectives on the development of memristors based on ferroelectric switching, including ferroelectric tunnel junctions. In these devices, conductive channels are formed in a similar manner to ... ...