Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one dimension [0.03%]
Driftfusion：一个用于模拟一维混合离子-电子导电材料的有序半导体器件的开源代码
Philip Calado,Ilario Gelmetti,Benjamin Hilton et al.
Philip Calado et al.
The recent emergence of lead-halide perovskites as active layer materials for thin film semiconductor devices including solar cells, light emitting diodes, and memristors has motivated the development of several new drift-diffusion models t...
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite [0.03%]
基于二维材料器件的多尺度模拟：NanoTCAD ViDES 套装
Damiano Marian,Enrique G Marin,Marta Perucchini et al.
Damiano Marian et al.
NanoTCAD ViDES (Versatile DEvice Simulator) is an open-source suite of computing codes aimed at assessing the operation and the performance of nanoelectronic devices. It has served the computational nanoelectronic community for almost two d...
Angelo Valli,Jan M Tomczak
Angelo Valli
Realizing the promises of molecular electronic devices requires an understanding of transport on the nanoscale. Here, we consider a Su-Schrieffer-Heeger model for semi-conducting trans-polyacetylene molecular wires in which we endow charge ...
Towards realistic modeling of plasmonic nanostructures: a comparative study to determine the impact of optical effects on solar cell improvement [0.03%]
等离子体纳米结构的现实模型研究及其对太阳能电池改进的影响分析比较研究
Gholamhosain Haidari
Gholamhosain Haidari
Plasmonic structures may improve cell performance in a variety of ways. More accurate determining of the optical influence, unlike ideal simulations, requires modeling closer to experimental cases. In this modeling and simulation, irregular...
A computational approach for investigating Coulomb interaction using Wigner-Poisson coupling [0.03%]
利用Wigner-Poisson耦合研究库仑相互作用的计算方法
Majid Benam,Mauro Ballicchia,Josef Weinbub et al.
Majid Benam et al.
Entangled quantum particles, in which operating on one particle instantaneously influences the state of the entangled particle, are attractive options for carrying quantum information at the nanoscale. However, fully-describing entanglement...
Noise immune dielectric modulated dual trench transparent gate engineered MOSFET as a label free biosensor: proposal and investigation [0.03%]
免疫噪声的电介质调制双沟槽透明栅极工程MOSFET作为无标记生物传感器：提议和调查
Dipanjan Sen,Arpan De,Bijoy Goswami et al.
Dipanjan Sen et al.
We propose and investigate a biosensor based on a transparent dielectric-modulated dual-trench gate-engineered metal-oxide-semiconductor field-effect transistor (DM DT GE-MOSFET) for label-free detection of biomolecules with enhanced sensit...
A systematic method for simulating total ionizing dose effects using the finite elements method [0.03%]
一种利用有限单元法模拟总剂量效应的系统方法
Eleni Chatzikyriakou,Kenneth Potter,C H de Groot
Eleni Chatzikyriakou
Simulation of total ionizing dose effects in field isolation of FET technologies requires transport mechanisms in the oxide to be considered. In this work, carrier transport and trapping in thick oxides using the finite elements method in t...
Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications [0.03%]
基于物理的忆阻器建模方法及其在存储和内存计算中的应用研究
D Ielmini,V Milo
D Ielmini
The semiconductor industry is currently challenged by the emergence of Internet of Things, Big data, and deep-learning techniques to enable object recognition and inference in portable computers. These revolutions demand new technologies fo...
A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation [0.03%]
半导体器件模拟中球谐波展开方法的新进展综述
K Rupp,C Jungemann,S-M Hong et al.
K Rupp et al.
The Boltzmann transport equation is commonly considered to be the best semi-classical description of carrier transport in semiconductors, providing precise information about the distribution of carriers with respect to time (one dimension),...
Maxim Belkin,Shu-Han Chao,Gino Giannetti et al.
Maxim Belkin et al.
Local modulation of temperature has emerged as a new mechanism for regulation of molecular transport through nanopores. Predicting the effect of such modulations on nanopore transport requires simulation protocols capable of reproducing non...