Indium Zinc Oxide Thin-Film Transistors with Ultraviolet Post-Annealing Treatment [0.03%]
紫外线退火铟锌氧化物薄膜晶体管
Zi-Tong Ao,Fei Shan,Hong-Bo Guo et al.
Zi-Tong Ao et al.
Ultraviolet treatment (UV) light was performed for indium zinc oxide thin-film transistors (TFTs) for different time so as to study the effects of post-annealing on electrical characteristic of TFTs. Electrical characteristic results proved...
Improving Charge Trapping/Detrapping Characteristics of Amorphous In-Ga-ZnO Thin-Film-Transistors Using Microwave Irradiation [0.03%]
利用微波照射改善非晶铟镓锌氧化物薄膜晶体管的载流子捕获/释放特性
Hyun-Woo Lee,Hyun-Seok Choi,Won-Ju Cho
Hyun-Woo Lee
We investigated the effect of post-deposition annealing (PDA) on the gate-bias-stress-induced charge trapping/detrapping phenomenon in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). To evaluate device reliability...
Synthesis and Characterization of Diketopyrrolopyrrole-Based Conjugated Polymers with Bithiophene and Biselenophene for Organic Thin Film Transistors [0.03%]
基于二噻吩和二硒吩的 diketopyrrolopyrrole 聚合物的有机薄膜晶体管的合成与表征
Hee Su Kim,Eul-Yong Shin,Gyujin Park et al.
Hee Su Kim et al.
In this study, two new thieno[3,2-b]thiophene-diketopyrrolopyrrole (DPP)-based polymers, poly{2,5-bis(2-dodecylhexadecyl)-3,6-bis(thieno[3,2-b]thiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-alt-2, 2'-bithiophene} (PTTDPP-BT) and {2,5-...
Improving Charge-Imbalanced Problem of Quantum Dot Light-Emitting Diodes with TPBi/ZnO Electron Transport Layer [0.03%]
基于TPBi/ZnO电子传输层改善量子点发光二极管的载流子复合不平衡问题
Sanghyun Lee,Junekyun Park,Jaewon Jeong et al.
Sanghyun Lee et al.
To solve charge-imbalanced problem caused by excessive electron injection into the emitting layer (EML) of quantum dot light emitting diodes (QLEDs) with ZnO electron transport layer (ETL), we proposed QLEDs with TPBi((2,2',2''-(1,3,5-Benzi...
Enhancement of the Electrical Characteristics for 3D NAND Flash Memory Devices Due to a Modified Cell Structure in the Gate Region [0.03%]
由于栅极区域单元结构改进而改善的三维闪存器件的电学特性
Yeon Gyu Lee,Hyun Soo Jung,Tae Whan Kim
Yeon Gyu Lee
The effect of a modified cell structure in the gate region on the electrical characteristics of three-dimensional (3D) NAND flash memory devices was investigated by using a technology computeraided design simulation. The interference in the...
Vibrational Spectrocopic Studies of Organic Molecules After Encapsulation Inside Single-Walled Carbon Nanotubes [0.03%]
单壁碳纳米管封装后有机分子的振动光谱研究
Junyoung Lee,Jongtaek Lee,Jonghee Yang et al.
Junyoung Lee et al.
7,7,8,8-tetracyano-p-quinodimethane (TCNQ), tetrathiafulvalene (TTF), and dodecanethiol (DoSH) were encapsulated inside single-walled carbon nanotubes (SWNTs), (TCNQ@SWNT, TTF@SWNT, and DoSH@SWNT). We measured the Fourier transform infra-re...
Physicochemical Modification Effect on Homogeneously Aligned Liquid Crystals Based on the Nickel Oxide Thin Film [0.03%]
基于镍氧化物薄膜的同位取向液晶的物理化学改性效应
Jonghoon Won,Hae-Chang Jeong,Ju Hwan Lee et al.
Jonghoon Won et al.
We demonstrated homogeneous liquid crystal (LC) alignment on Nickel Oxide (NiO) films subjected to ion beam (IB) irradiation. Uniform LC alignment was achieved at high IB intensity values of 1200 and 1800 eV. To determine the mechanism of L...
Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward Current [0.03%]
具有场板结构的栅控肖特基二极管型突触器件及其前向电流抑制效应
Jong-Ho Bae,Suhwan Lim,Dongseok Kwon et al.
Jong-Ho Bae et al.
A gated Schottky diode with a field-plate structure is proposed and investigated as a new low-power synaptic device to suppress the forward current of the Schottky diode. In a hardware-based neural network, unwanted forward current can flow...
Investigation of Positive Bias Temperature Instability Characteristics of Fully Depleted Silicon on Insulator Tunneling Field Effect Transistor with High-k Dielectric Gate Stacks [0.03%]
高介电常数栅介质堆栈全耗尽绝缘体上硅隧穿场效应晶体管的正偏温稳特性研究
Hyeong-Sub Song,So-Yeong Kim,Dong-Hwan Lim et al.
Hyeong-Sub Song et al.
The positive bias temperature instability (PBTI) characteristics of fully depleted silicon on insulator (FD-SOI) tunneling field effect transistor (TFET) are investigated in comparison with those of metal oxide semiconductor field effect tr...
Steep Slope Silicon-on-Insulator Field Effect Transistor with Negative Capacitance: Analysis on Hysteresis [0.03%]
具有负电容的陡峭斜坡SOI场效应晶体管：滞后分析
Eunah Ko,Jaemin Shin,Changhwan Shin
Eunah Ko
In recent 10 years, many studies have investigated/considered negative capacitance field effect transistor (NCFET) as future low-power device. In addition to the experimental demonstration of NC planar bulk MOSFET, the state-of-the-art 14 n...