Improving Charge Trapping/Detrapping Characteristics of Amorphous In-Ga-ZnO Thin-Film-Transistors Using Microwave Irradiation
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We investigated the effect of post-deposition annealing (PDA) on the gate-bias-stress-induced charge trapping/detrapping phenomenon in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). To evaluate device reliability, we used the microw... ...
