A Study on Electrical Reliability Criterion on Through Silicon Via Packaging [0.03%]
硅通孔封装之电气可靠度准则研究
Ben-Je Lwo,Kuo-Hao Tseng,Kun-Fu Tseng
Ben-Je Lwo
Three-dimensional (3D) structure with through silicon via (TSV) technology is emerging as a key issue in microelectronic packaging industry, and electrical reliability has become one of the main technical subjects for the TSV designs. Howev...
Reliability Assessment and Activation Energy Study of Au and Pd-Coated Cu Wires Post High Temperature Aging in Nanoscale Semiconductor Packaging [0.03%]
纳米级半导体封装经受高温老化后Au和Pd镀Cu线的可靠性评估及活化能研究
C L Gan,U Hashim
C L Gan
Wearout reliability and high temperature storage life (HTSL) activation energy of Au and Pd-coated Cu (PdCu) ball bonds are useful technical information for Cu wire deployment in nanoscale semiconductor device packaging. This paper discusse...
Effect of Indium Content on the Melting Point, Dross, and Oxidation Characteristics of Sn-2Ag-3Bi-xIn Solders [0.03%]
铟含量对Sn-2Ag-3Bi-xIn系钎料熔点、浮渣及氧化特性的影响研究
Ae-Jeong Jeon,Seong-Jun Kim,Sang-Hoon Lee et al.
Ae-Jeong Jeon et al.
This paper presents the effect of indium (In) content on the melting temperature, wettabililty, dross formation, and oxidation characteristics of the Sn-2Ag-3Bi-xIn alloy. The melting temperature of the Sn-2Ag-3Bi-xIn alloy (2 ≤ x ≤ 6) wa...