InGaAs Inversion Layer Mobility and Interface Trap Density from Gated Hall Measurements [0.03%]
gated hall测量下的Ingaas反型层迁移率及其界面陷阱密度
T Chidambaram,D Veksler,S Madisetti et al.
T Chidambaram et al.
In this work, we use gated Hall method for direct measurement of free carrier density and electron mobility in inversion InGaAs MOSFET channels. At room temperature, the highest Hall mobility of 1800 cm2/Vs is observed at electron density i...
In-Place Printing of Flexible Electrolyte-Gated Carbon Nanotube Transistors with Enhanced Stability [0.03%]
具有增强稳定性的柔性电解质栅控碳纳米管晶体管的原位打印技术
Jorge A Cardenas,Shiheng Lu,Nicholas X Williams et al.
Jorge A Cardenas et al.
Ion gel-based dielectrics have long been considered for enabling low-voltage operation in printed thin-film transistors (TFTs), but their compatibility with in-place printing (a streamlined, direct-write printing approach where devices neve...
A sub-1V, microwatt power-consumption iontronic pressure sensor based on organic electrochemical transistors [0.03%]
一种基于有机电化学晶体管的亚1伏微瓦级功耗离子压传感器
Xiaochen Wang,Xiang Meng,Yangzhi Zhu et al.
Xiaochen Wang et al.
Wearable and implantable pressure sensors are in great demand for personalized health monitoring. Pressure sensors with low operation voltage and low power-consumption are desired for energy-saving devices. Organic iontronic devices, such a...
CMOS-Integrated Low-Noise Junction Field-Effect Transistors for Bioelectronic Applications [0.03%]
用于生物电子学应用的CMOS集成低噪声结型场效应晶体管
Daniel A Fleischer,Siddharth Shekar,Shanshan Dai et al.
Daniel A Fleischer et al.
In this work, we present a CMOS-integrated low-noise junction field-effect transistor (JFET) developed in a standard 0.18 pm CMOS process. These JFETs reduce input-referred flicker noise power by more than a factor of 10 when compared to eq...
Wenjun Li,Matt D Brubaker,Bryan T Spann et al.
Wenjun Li et al.
Wrap-around gate GaN nanowire MOSFETs using Al2O3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades o...
David M Nminibapiel,Dmitry Veksler,J-H Kim et al.
David M Nminibapiel et al.
The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that p...