A Novel Approach for Analysis of Rocking Curve X-Ray Diffraction Imaging Data (RC-XRDI) on 4H-SiC Using Cumulative Integrated Intensity (CII) Method [0.03%]
基于累积积分强度（CII）方法的4H-SiC材料 rocking curve x射线衍射成像数据分析的新思路
Arash Estiri,Richard Bytheway,Tamzin Amanda Lafford et al.
Arash Estiri et al.
This paper presents a novel method of using cumulative integrated intensity (CII) to analyse rocking curve x-ray diffraction imaging (RC-XRDI) data. This method overcomes several limitations of traditional complex non-ideal curve fitting, w...
Electronic Melting of Silicon in Nanostructures using X-ray Forbidden Bragg Reflections [0.03%]
基于X射线禁戒布拉格反演散射的纳米结构硅的电子熔化
Ian Robinson,David Yang,Longlong Wu et al.
Ian Robinson et al.
We carried out a short beamtime at the Pohang Accelerator Laboratory x-ray Free Electron Laser to perform a pump-probe (PP) laser excitation diffraction experiment on the silicon (222) forbidden Bragg peak. To limit the x-ray penetration, w...
Catalytic Degradation of Organic Dyes Indicates Anti-Proliferative Effects of Magnetoelectric Nanoparticles [0.03%]
磁电纳米颗粒催化降解有机染料及其抗增殖效应
Max Shotbolt,Emily Zhu,Victoria Andre et al.
Max Shotbolt et al.
Over the past decade, magnetoelectric nanoparticles (MENPs) have proven effective in generating local electric fields in response to stimulation with a magnetic field. The applications of such nanoparticles are many and varied, with example...
Improving the Seebeck Coefficient and Electrical Conductivity of Fe11Ti3Al6 by Substituting Fe with Cr [0.03%]
通过用Cr替代Fe提高Fe11Ti3Al6的塞贝克系数和电导率
Sukhwinder Singh,Joseph Alemzadeh,Guillermo Menendez Rodriguez et al.
Sukhwinder Singh et al.
In general, any attempt to increase the Seebeck coefficient is usually accompanied by a decrease in the electrical conductivity or vice versa due to the interplay between these two parameters. This work demonstrates that a simultaneous incr...
Time-Lapse Imaging of Bismuth Precipitation and Coarsening on the Surface of Sn-Ag-Cu-Bi Solder Joints After Thermal Cycling [0.03%]
热循环后Sn-Ag-Cu-Bi焊点表面铋析出及长大的时态成像研究
Chen-Lin Hsieh,Richard J Coyle,Christopher M Gourlay
Chen-Lin Hsieh
Adding bismuth to Sn-Ag-Cu solder compositions can significantly improve reliability in thermal cycling, but there are uncertainties in how bismuth precipitates and coarsens in Sn-Ag-Cu-Bi solders containing > 3 wt.% Bi. Here we apply time-...
Band Offset and Electron Affinity of Monolayer MoSe2 by Internal Photoemission [0.03%]
单层二硒化钼的能带偏移和电子亲和力的内部光电子发射研究
Qin Zhang,Siyuan Zhang,Brent A Sperling et al.
Qin Zhang et al.
The electron energy band alignment of the monolayer MoSe2/oxide/Si system is characterized by internal photoemission spectroscopy, where the oxide is Al2O3 or SiO2. Raman and photoluminescence spectroscopic measurements confirm the high qua...
Qihua Zhang,Benjamin Klein,Norman A Sanford et al.
Qihua Zhang et al.
Rigorous electrostatic modeling of the specimen-electrode environment is required to better understand the fundamental processes of atom probe tomography (APT) and guide the analysis of APT data. We have developed a simulation tool that sel...
Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates [0.03%]
面对晶圆上氮化铝纳米结构模板的气相外延生长氮化铝的微结构和纳米结构分析
Yudai Nakanishi,Yusuke Hayashi,Takeaki Hamachi et al.
Yudai Nakanishi et al.
Micro- and nanostructures in vapor-phase-grown AlN on face-to-face annealed sputtered AlN (FFA Sp-AlN) templates formed on nanopatterned sapphire substrates (NPSS) were comprehensively analyzed using transmission electron microscopy. The co...
Partial Segregation of Bi and Microvoid Formation on a Pure Cu Substrate After Solid-Solid Reactions [0.03%]
Bi的部分分离及固-固反应后纯Cu基底上微空洞的形成
Yi-Wun Wang,Hua-Tui Liang,Kai-Chia Chang et al.
Yi-Wun Wang et al.
With the trend of technology development and carbon reduction, reducing the process temperature to prevent greenhouse effects is of great urgency. The back-end process of semiconductors is increasingly important because of the limitation of...
A Thrifty Liquid-Phase Exfoliation (LPE) of MoSe2 and WSe2 Nanosheets as Channel Materials for FET Application [0.03%]
一种节俭的液相剥离法（LPE）剥落MoSe2和WSe2纳米片作为FET应用的沟道材料研究
Rohit Sharma,Anit Dawar,Sunil Ojha et al.
Rohit Sharma et al.
Two-dimensional materials are trending nowadays because of their atomic thickness, layer-dependent properties, and their fascinating application in the semiconducting industry. In this work, we have synthesized MoSe2 and WSe2 nanosheets (NS...