Applications of Fracture Mechanics to Quantitative Accelerated Life Testing of Plastic Encapsulated Microelectronics [0.03%]
断裂力学在塑料封装微电子定量加速寿命测试中的应用
John W Evans,Koustav Sinha
John W Evans
Accelerated testing must address the failure mechanisms active within the devices undergoing tests in order to assess lifetimes in a meaningful way. The assumption of constant temperature, thermally activated lifetime, based upon the Arrhen...
Electromigration failure in a copper dual-damascene structure with a through silicon via [0.03%]
含TSV的铜双 damascene结构中的电迁移失效
R L de Orio,H Ceric,S Selberherr
R L de Orio
Electromigration induced failure development in a copper dual-damascene structure with a through silicon via (TSV) located at the cathode end of the line is studied. The resistance change caused by void growth under the TSV and the intercon...
A compact model for early electromigration failures of copper dual-damascene interconnects [0.03%]
铜双镶嵌互连早期电迁移失效的紧凑模型研究
R L de Orio,H Ceric,S Selberherr
R L de Orio
A compact model for early electromigration failures in copper dual-damascene interconnects is proposed. The model is based on the combination of a complete void nucleation model together with a simple mechanism of slit void growth under the...
Impact of Single pMOSFET Dielectric Degradation on NAND Circuit Performance [0.03%]
单个pMOSFET绝缘体退化对NAND电路性能的影响
D Estrada,M L Ogas,R G Southwick et al.
D Estrada et al.
Degradation of CMOS NAND logic circuits resulting from dielectric degradation of a single pMOSFET using constant voltage stress has been examined by means of a switch matrix technique. As a result, the NAND gate rise time increases by great...