Study of High Performance Nanoscale Channel Length Vertical Transistors with a Self-Aligned Blocking Layer [0.03%]
具有自对准阻挡层的高性能纳米级垂直晶体管研究
Goeun Pyo,Su Jin Heo,Dongsu Kim et al.
Goeun Pyo et al.
A transistor design employing all vertically stacked components has attracted considerable attention due to the simplicity of the fabrication process and the high conductivity easily realized by achieving nanolevel short channel lengths wit...
Imine-Linked 3D Covalent Organic Framework Membrane Featuring Highly Charged Sub-1 nm Channels for Exceptional Lithium-Ion Sieving [0.03%]
用于优异锂离子筛分的高度带电亚纳米级通道的基于亚胺连接的三维共价有机框架膜
Tong Wu,Yijun Qian,Zebin Zhu et al.
Tong Wu et al.
Coupling ion exclusion and interaction screening within sub-nanoconfinement channels in novel porous material membranes hold great potential to realize highly efficient ion sieving, particularly for high-performance lithium-ion extraction. ...
Nanometer-Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers [0.03%]
范德华层的纳米级一维负电阻通道
Qirong Yao,Jae Whan Park,Choongjae Won et al.
Qirong Yao et al.
Negative differential resistance (NDR) is the key feature of resonant tunneling diodes exploited for high-frequency and low-power devices and recent studies have focused on NDR in van der Waals heterostructures and nanoscale materials. Here...
Kunmo Koo,Joon Ha Chang,Sanghyeon Ji et al.
Kunmo Koo et al.
Modern semiconductor fabrication is challenged by difficulties in overcoming physical and chemical constraints. A major challenge is the wet etching of dummy gate silicon, which involves the removal of materials inside confined spaces of a ...
An optically fabricated gradient nanochannel array to access the translocation dynamics of T4-phage DNA through nanoconfinement [0.03%]
一种光学制造的纳米级通道梯度阵列及其对T4噬菌体DNA在纳受限条件下传输动力学的影响研究
Chen Zhang,Jiaqing Hou,Yang Zeng et al.
Chen Zhang et al.
It has been widely recognized that nanostructures in natural biological materials play important roles in regulating life machinery. Even though nanofabrication techniques such as two-photon polymerization (TPP) provide sub-100 nm fabricati...
Nanoscale Channel Gate-Tunable Diodes Obtained by Asymmetric Contact and Adhesion Lithography on Fluoropolymers [0.03%]
基于氟聚合物的不对称接触和粘附光刻纳米级沟道栅调制二极管
Minseo Kim,Seongjae Kim,Hocheon Yoo
Minseo Kim
Adhesion lithography offers to fabrication of coplanar asymmetric nanogap electrodes with a low-cost and facile process. In this study, a gate-tunable diode with coplanar asymmetric nanogap is fabricated using adhesion lithography. A fluoro...
Selectively Enhanced Electrocatalytic Oxygen Evolution within Nanoscopic Channels Fitting a Specific Reaction Intermediate for Seawater Splitting [0.03%]
通过拟合特定反应中间体的纳米级通道实现选择性增强的电催化氧进化用于海水裂解
Seokmin Shin,Tae-Ung Wi,Tae-Hoon Kong et al.
Seokmin Shin et al.
Abundant availability of seawater grants economic and resource-rich benefits to water electrolysis technology requiring high-purity water if undesired reactions such as chlorine evolution reaction (CER) competitive to oxygen evolution react...
Highly Flexible and Broad-Range Mechanically Tunable All-Wood Hydrogels with Nanoscale Channels via the Hofmeister Effect for Human Motion Monitoring [0.03%]
利用Hofmeister效应制备具有纳米级通道的全木质高柔性广范围机械可调水凝胶以监测人体运动
Guihua Yan,Shuaiming He,Gaofeng Chen et al.
Guihua Yan et al.
Wood-based hydrogel with a unique anisotropic structure is an attractive soft material, but the presence of rigid crystalline cellulose in natural wood makes the hydrogel less flexible. In this study, an all-wood hydrogel was constructed by...
Analysis of the electron emission characteristics and working mechanism of a planar bottom gate vacuum field emission triode with a nanoscale channel [0.03%]
平面底栅纳米级场致发射三极管的电子发射特性和工作机理分析
Xiao Wang,Tao Xue,Zhihua Shen et al.
Xiao Wang et al.
A planar lateral vacuum field emission triode (VFET) with a nanoscale channel of 80-90 nm was fabricated on a silicon wafer. The nanoscale channel of this vacuum triode was generated by via the electro-forming process (EFP). With the use of...
Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer [0.03%]
纳米级沟道层顶栅SnO薄膜晶体管性能突破性提升
Te Jui Yen,Albert Chin,Vladimir Gritsenko
Te Jui Yen
Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conv...
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