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Advanced science (Weinheim, Baden-Wurttemberg, Germany). 2024 Nov 13:e2408090. doi: 10.1002/advs.202408090 Q114.12025

Nanometer-Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers

范德华层的纳米级一维负电阻通道 翻译改进

Qirong Yao  1, Jae Whan Park  1, Choongjae Won  2  3, Sang-Wook Cheong  2  3  4, Han Woong Yeom  1  5

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作者单位

  • 1 Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, South Korea.
  • 2 Laboratory for Pohang Emergent Materials, Department of Physics, Pohang University of Science and Technology, Pohang, 37673, South Korea.
  • 3 Max Plank Pohang University of Science and Technology (POSTECH) Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang, 37673, South Korea.
  • 4 Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854-8019, USA.
  • 5 Department of Physics, Pohang University of Science and Technology, Pohang, 37673, South Korea.

    • DOI: 10.1002/advs.202408090 PMID: 39538418

    摘要 中英对照阅读

    Negative differential resistance (NDR) is the key feature of resonant tunneling diodes exploited for high-frequency and low-power devices and recent studies have focused on NDR in van der Waals heterostructures and nanoscale materials. Here, strong NDR confined along a 1-nm-wide 1D channel within a van der Waals layer 1T-TaS2 is reported. Using scanning tunneling microscopy, a double 1D NDR channel formed along the sides of a charge-density-wave domain wall of 1T-TaS2 is found. The density functional theory calculation elucidates that the strong local band-bending at the domain wall and the interlayer orbital overlap cooperate to bring about 1D NDR channels. Furthermore, the NDR is well controlled by changing the tunneling junction distance. This result would be important for nanoscale device applications based on strong nonlinear resistance within van der Waals material architectures.

    Keywords: 1T‐TaS2; density‐functional calculations; interlayer orbital overlap; negative differential resistance; scanning tunneling microscopy and spectroscopy.

    Keywords：nanometer-scale channels; van der waals layers

    负微分电阻（NDR）是共振隧穿二极管的关键特性，被用于高频和低功耗设备，并且最近的研究主要集中在范德华异质结和纳米材料中的NDR现象。在这里，报道了一种在1T-TaS2 范德华层内宽度为1 nm的二维通道中出现的强大NDR效应。使用扫描隧道显微镜发现，在1T-TaS2 电荷密度波畴壁两侧形成了双一维NDR通道。基于密度泛函理论的计算阐明，畴壁处强烈的局部带弯曲与层间轨道重叠共同作用产生了这种一维NDR通道。此外，通过改变隧穿结距离可以很好地控制该NDR效应。这一结果对于基于范德华材料结构的强大非线性电阻纳米器件的应用具有重要意义。

    关键词：1T-TaS2; 密度泛函计算；层间轨道重叠；负微分电阻；扫描隧道显微镜和光谱法。

    关键词：纳米级通道; 负阻特性; 范德华层

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    Copyright © Advanced science (Weinheim, Baden-Wurttemberg, Germany). 中文内容为AI机器翻译，仅供参考！

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    期刊名：Advanced science

    缩写：ADV SCI

    ISSN：N/A

    e-ISSN：2198-3844

    IF/分区：14.1/Q1

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