Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers [0.03%]
直接生长在蓝宝石基片上的单层石墨烯膜作为忆阻器电极
Zhichao Weng,Robert Wallis,Bryan Wingfield et al.
Zhichao Weng et al.
The development of the memristor has generated significant interest due to its non-volatility, simple structure, and low power consumption. Memristors based on graphene offer atomic monolayer thickness, flexibility, and uniformity and have ...
The Role of Interface Band Alignment in Epitaxial SrTiO3/GaAs Heterojunctions [0.03%]
外延SrTiO3/GaAs异质结界面能带对齐的作用研究
Shaked Caspi,Maria Baskin,Sergey Shay Shusterman et al.
Shaked Caspi et al.
Correlated oxides are known to have remarkable properties, with a range of electronic, magnetic, optoelectronic, and photonic functionalities. A key ingredient in realizing these properties into practical technology is the effective and sca...
High Performance MXene/MnCo2O4 Supercapacitor Device for Powering Small Robotics [0.03%]
用于小型机器人的高性能MXene/二氧化锰钴氧(MnCo2O4)超级电容器器件
Nanasaheb M Shinde,Martin Pumera
Nanasaheb M Shinde
The development of advanced energy storage devices is critical for various applications including robotics and portable electronics. The energy storage field faces significant challenges in designing devices that can operate effectively for...
Effects of In-Air Post Deposition Annealing Process on the Oxygen Vacancy Content in Sputtered GDC Thin Films Probed via Operando XAS and Raman Spectroscopy [0.03%]
基于原位X射线吸收谱和拉曼光谱探测的空气中浆料沉积退火对GDC薄膜氧空位含量的影响研究
Nunzia Coppola,Sami Ur Rehman,Giovanni Carapella et al.
Nunzia Coppola et al.
We investigate the ionic mobility in room-temperature RF-sputtered gadolinium doped ceria (GDC) thin films grown on industrial solid oxide fuel cell substrates as a function of the air-annealing at 800 and 1000 °C. The combination of X-ray...
Determination of Imprint Effects in Ferroelectrics from the Quantified Phase and Amplitude Response [0.03%]
铁电材料印模效应的定量相位和振幅表征方法及其物理机制研究
Subhajit Pal,Emanuele Palladino,Haozhen Yuan et al.
Subhajit Pal et al.
Piezoresponse force microscopy (PFM) is a robust characterization technique to explore ferroelectric properties at the nanoscale. However, the PFM signal can lead to misinterpretation of results due to the dominant electrostatic interaction...
Pseudosymmetry in Tetragonal Perovskite SrIrO3 Synthesized under High Pressure [0.03%]
高压合成四方钙钛矿SrIrO3中的准对称性
Haozhe Wang,Alberto de la Torre,Joseph T Race et al.
Haozhe Wang et al.
In this study, we report a tetragonal perovskite structure of SrIrO3 (P4/mmm, a = 3.9362(9) Å, c = 7.880(3) Å) synthesized at 6 GPa and 1400 °C, employing the ambient pressure monoclinic SrIrO3 with distorted 6H structure as a precursor....
Harnessing Compositional Gradients to Elucidate Phase Behaviors toward High Performance Polymer Semiconductor Blends [0.03%]
利用组成梯度阐明高性能聚合物半导体合金的相行为
Rahul Venkatesh,Aaron L Liu,Yulong Zheng et al.
Rahul Venkatesh et al.
Polymer semiconductor/insulator blends offer a promising avenue to achieve desired mechanical properties, environmental stability, and high device performance in organic field-effect transistors. A comprehensive understanding of process-str...
An Aerosol-Assisted Chemical Vapor Deposition Route to Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties [0.03%]
基于气溶胶辅助化学气相沉积的Sn掺杂Ga2O3光电子薄膜的研究
Ruizhe Chen,Sanjayan Sathasivam,Joanna Borowiec et al.
Ruizhe Chen et al.
Gallium oxide is a wide-bandgap compound semiconductor material renowned for its diverse applications spanning gas sensors, liquid crystal displays, transparent electrodes, and ultraviolet detectors. This paper details the aerosol assisted ...
Unlocking Neuromorphic Vision: Advancements in IGZO-Based Optoelectronic Memristors with Visible Range Sensitivity [0.03%]
基于IGZO的可见光范围敏感光电忆阻器在神经形态视觉中的应用进展
Maria Elias Pereira,Jonas Deuermeier,Rodrigo Martins et al.
Maria Elias Pereira et al.
Optoelectronic memristors based on amorphous oxide semiconductors (AOSs) are promising devices for the development of spiking neural network (SNN) hardware in neuromorphic vision sensors. In such devices, the conductance state can be contro...
Reducing the Metal-Graphene Contact Resistance through Laser-Induced Defects [0.03%]
利用激光诱导缺陷降低金属与石墨烯接触电阻
Vikas Jangra,Satender Kataria,Max C Lemme
Vikas Jangra
Graphene has been extensively studied for a variety of electronic and optoelectronic applications. The reported contact resistance between metal and graphene, or rather its specific contact resistance (R C), ranges from a few tens of Ω μm...