Negatively Charged In-Plane and Out-Of-Plane Domain Walls with Oxygen-Vacancy Agglomerations in a Ca-Doped Bismuth-Ferrite Thin Film [0.03%]
含钙铋铁酸盐薄膜中带负电且聚集氧空位的面内和偏离平面的畴壁
Ulrich Haselmann,Y Eren Suyolcu,Ping-Chun Wu et al.
Ulrich Haselmann et al.
The interaction of oxygen vacancies and ferroelectric domain walls is of great scientific interest because it leads to different domain-structure behaviors. Here, we use high-resolution scanning transmission electron microscopy to study the...
PO x /Al2O3 Stacks for c-Si Surface Passivation: Material and Interface Properties [0.03%]
用于c-Si表面钝化的PO x / Al2O3堆栈：材料和界面特性
Roel J Theeuwes,Jimmy Melskens,Lachlan E Black et al.
Roel J Theeuwes et al.
Phosphorus oxide (PO x ) capped by aluminum oxide (Al2O3) has recently been discovered to provide excellent surface passivation of crystalline silicon (c-Si). In this work, insights into the passivation mechanism of PO x /Al2O3 stacks are g...
A Rapidly Stabilizing Water-Gated Field-Effect Transistor Based on Printed Single-Walled Carbon Nanotubes for Biosensing Applications [0.03%]
基于印刷单壁碳纳米管的快速稳定水门场效应晶体管在生物传感中的应用
Alireza Molazemhosseini,Fabrizio Antonio Viola,Felix J Berger et al.
Alireza Molazemhosseini et al.
Biosensors are expected to revolutionize disease management through provision of low-cost diagnostic platforms for molecular and pathogenic detection with high sensitivity and short response time. In this context, there has been an ever-inc...
On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance [0.03%]
基于ALD的MoS2 FET接触优化：处理条件和界面化学与器件电学性能之间的关系
Reyhaneh Mahlouji,Yue Zhang,Marcel A Verheijen et al.
Reyhaneh Mahlouji et al.
Despite the extensive ongoing research on MoS2 field effect transistors (FETs), the key role of device processing conditions in the chemistry involved at the metal-to-MoS2 interface and their influence on the electrical performance are ofte...
All-Evaporated, All-Inorganic CsPbI3 Perovskite-Based Devices for Broad-Band Photodetector and Solar Cell Applications [0.03%]
全无机铯铅碘钙钛矿多光电探测器及太阳能电池器件研究
Maria Isabel Pintor Monroy,Iakov Goldberg,Karim Elkhouly et al.
Maria Isabel Pintor Monroy et al.
Following the rapid increase of organic metal halide perovskites toward commercial application in thin-film solar cells, inorganic alternatives attracted great interest with their potential of longer device lifetime due to the stability imp...
Textile-Based Stretchable Microstrip Antenna with Intrinsic Strain Sensing [0.03%]
一种具备应变检测功能的纺织品基可拉伸微带天线
Fatemeh Nikbakhtnasrabadi,Hatem El Matbouly,Markellos Ntagios et al.
Fatemeh Nikbakhtnasrabadi et al.
This paper presents a textile-based stretchable microstrip patch antenna with intrinsic strain for e-textiles with seamlessly integrated multifunctional devices. Several microstrip antennas have been developed with the patch alone (stretcha...
Thin Film Growth of a Charge Transfer Cocrystal (DCS/TFPA) for Ambipolar Thin Film Transistors [0.03%]
用于双极薄膜晶体管的电荷转移共晶薄膜生长（DCS / TFPA）
Wolfgang Rao Bodlos,Sang Kyu Park,Birgit Kunert et al.
Wolfgang Rao Bodlos et al.
The highly luminescent dicyanodistyrylbenzene-based charge-transfer (CT) cocrystal based on isometric donor and acceptor molecules with a mixing ratio of 2:1 is characterized in the thin film regime. Physical vapor deposited films prepared ...
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon [0.03%]
硅衬底上金属有机物化学气相沉积外延生长的GaN高电子迁移率晶体管中异常衬底导电的原因
Saptarsi Ghosh,Alexander Hinz,Simon M Fairclough et al.
Saptarsi Ghosh et al.
The performance of transistors designed specifically for high-frequency applications is critically reliant upon the semi-insulating electrical properties of the substrate. The suspected formation of a conductive path for radio frequency (RF...
Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth [0.03%]
实现HEMT与高调制带宽单微发光二极管芯片单片集成的直接外延方法
Yuefei Cai,Jack I H Haggar,Chenqi Zhu et al.
Yuefei Cai et al.
Visible light communications (VLC) require III-nitride visible micro-light-emitting diodes (μLEDs) with a high-modulation bandwidth. Such μLEDs need to be driven at a high injection current density on a kA/cm2 scale, which is about 2 orde...
In situ transport measurements reveal source of mobility enhancement of MoS2 and MoTe2 during dielectric deposition [0.03%]
原位输运测量揭示了介电层沉积期间二硫化钼和二碲化钼迁移率提升的来源
Ju Ying Shang,Michael J Moody,Jiazhen Chen et al.
Ju Ying Shang et al.
Layered transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are promising candidates for enhancing the capabilities of complementary metal-oxide-semiconductor (CMOS) technology. Field-effect transistors (FETs) m...