Crystal and Electronic Structure of Oxygen Vacancy Stabilized Rhombohedral Hafnium Oxide [0.03%]
氧空位稳定菱方氧化铪的晶体和电子结构
Nico Kaiser,Young-Joon Song,Tobias Vogel et al.
Nico Kaiser et al.
Hafnium oxide is an outstanding candidate for next-generation nonvolatile memory solutions such as OxRAM (oxide-based resistive memory) and FeRAM (ferroelectric random access memory). A key parameter for OxRAM is the controlled oxygen defic...
Dielectric Properties of Polymer Nanocomposite Interphases Using Electrostatic Force Microscopy and Machine Learning [0.03%]
基于静电力显微镜和机器学习的聚合物纳米复合材料相互界面的介电性质研究
Praveen Gupta,Eric Ruzicka,Brian C Benicewicz et al.
Praveen Gupta et al.
Knowing the dielectric properties of the interfacial region in polymer nanocomposites is critical to predicting and controlling dielectric properties. They are, however, difficult to characterize due to their nanoscale dimensions. Electrost...
Non-Embedded Silver Nanowires/Antimony-Doped Tin Oxide/Polyethylenimine Transparent Electrode for Non-Fullerene Acceptor ITO-Free Inverted Organic Photovoltaics [0.03%]
用于无 Fullerene 受体的 ITO 自由反式有机光伏的非嵌入银纳米线/锑掺杂二氧化锡/聚乙二胺透明电极
Efthymios Georgiou,Apostolos Ioakeimidis,Ioanna Antoniou et al.
Efthymios Georgiou et al.
Indium tin oxide (ITO)-free solution-processed transparent electrodes are an essential component for the low-cost fabrication of organic optoelectronic devices. High-performance silver nanowires (AgNWs) ITO-free inverted organic photovoltai...
Sukhrob Abdulazhanov,Quang Huy Le,Dang Khoa Huynh et al.
Sukhrob Abdulazhanov et al.
In this paper, we present a broadband microwave characterization of ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2) metal-ferroelectric-metal (MFM) thin film varactor from 1 kHz up to 0.11 THz. The varactor is integrated into the back-...
High-Strain-Induced Local Modification of the Electronic Properties of VO2 Thin Films [0.03%]
高应变引起的VO2薄膜电子性能的局部修改
Yorick A Birkhölzer,Kai Sotthewes,Nicolas Gauquelin et al.
Yorick A Birkhölzer et al.
Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long- and short-range elastic...
Fine-Tuning the Performance of Ultraflexible Organic Complementary Circuits on a Single Substrate via a Nanoscale Interfacial Photochemical Reaction [0.03%]
通过纳米级界面光化学反应在单个基板上精细调整超柔性有机互补电路的性能
Koki Taguchi,Takafumi Uemura,Andreas Petritz et al.
Koki Taguchi et al.
Flexible electronics has paved the way toward the development of next-generation wearable and implantable healthcare devices, including multimodal sensors. Integrating flexible circuits with transducers on a single substrate is desirable fo...
Ferroelectric-Antiferroelectric Transition of Hf1- x Zr x O2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2 [0.03%]
铟砷化物上Hf1- x Zr x O2的铁电反铁电相变及Hf0.2Zr0.8O2的铁电性能提升
Hannes Dahlberg,Anton E O Persson,Robin Athle et al.
Hannes Dahlberg et al.
The ferroelectric (FE)-antiferroelectric (AFE) transition in Hf1-x Zr x O2 (HZO) is for the first time shown in a metal-ferroelectric-semiconductor (MFS) stack based on the III-V material InAs. As InAs displays excellent electron mobility a...
Memristor-Based Neuromodulation Device for Real-Time Monitoring and Adaptive Control of Neuronal Populations [0.03%]
基于忆阻器的神经调节装置，用于神经元群体的实时监测和自适应控制
Catarina Dias,Domingos Castro,Miguel Aroso et al.
Catarina Dias et al.
Neurons are specialized cells for information transmission and information processing. In fact, many neurologic disorders are directly linked not to cellular viability/homeostasis issues but rather to specific anomalies in electrical activi...
Surface Passivation of III-V GaAs Nanopillars by Low-Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices [0.03%]
III-VGaAs纳米柱的表面钝化通过低频等离子体沉积氮化硅用于活性纳米光子器件
Bejoys Jacob,Filipe Camarneiro,Jérôme Borme et al.
Bejoys Jacob et al.
Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly efficient III-V sub-micrometer active devices and circuits. Despite...
Impact of Polymer-Assisted Epitaxial Graphene Growth on Various Types of SiC Substrates [0.03%]
聚物辅助外延石墨烯在各种SiC衬底上生长的影响研究
Atasi Chatterjee,Mattias Kruskopf,Stefan Wundrack et al.
Atasi Chatterjee et al.
The growth parameters for epitaxial growth of graphene on silicon carbide (SiC) have been the focus of research over the past few years. However, besides the standard growth parameters, the influence of the substrate pretreatment and proper...