Effect of Various Geometry Parameters on the Performance of Nanoplate Field Effect Transistor with Negative Capacitance [0.03%]
几何参数对负电容纳米板场效应晶体管性能的影响研究
Changbeom Woo,Jang Kyu Lee,Myounggon Kang et al.
Changbeom Woo et al.
In this paper, we investigate the impact of geometry parameters such as ferroelectric layer thickness (TFE), extension length (LExt), overlap length (Lov) on negative capacitance FET (NCFET). The NCFET is designed using HfZrO₂ (HZO) ferroe...
Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4 [0.03%]
lateral扩散金属氧化物半导体漂移区的物理容量模型及其与BSIM4的联合实施
Jun Hyeok Kim,Chan Ho Park,Sung Moo Kim et al.
Jun Hyeok Kim et al.
A physical capacitance model is presented for the drift region in a laterally diffused metal-oxide semiconductor (LDMOS). It is derived as a surface-potential-based model of nodal charge for the drift region. The model is combined with BSIM...
Eun-Je Park,Jong-Moon Choi,Kee-Won Kwon
Eun-Je Park
Single-poly floating gate is an efficient device for charge storage due to low power program, and implemented in a standard CMOS process. In floating gate, charges are injected and removed through the thin gate oxide. Among the gate leakage...
Won Joo Lee,Hui Tae Kwon,Hyun-Seok Choi et al.
Won Joo Lee et al.
In this paper, a novel structure of tunnel field-effect transistors (TFETs) is proposed. The proposed device has an intrinsic polysilicon layer located in the overlap region between the source and the gate, which can increase the tunneling ...
Variability-Aware Simulation Strategy for Gate-All-Around Vertical Field Effect Transistor [0.03%]
适用于全环垂直场效应晶体管的变差模拟策略
Kyul Ko,Myounggon Kang,Jongwook Jeon et al.
Kyul Ko et al.
In this work, the work function variation (WFV) and global variability (GV) sources on 5 nm node gate-all-around (GAA) silicon vertical field-effect transistor (VFET) devices are studied through technology computer-aided design (TCAD) simul...
Analysis of Variation and Ferroelectric Layer Thickness on Negative Capacitance Nanowire Field-Effect Transistor [0.03%]
变容与铁电层厚度对负电容纳米线场效应晶体管性能的影响分析
Jang Kyu Lee,Changbeom Woo,Jongsu Kim et al.
Jang Kyu Lee et al.
We investigate the interrelation between some variations and the stability of Negative Capacitance Field-Effect Transistors (NC FETs). When a variation effect is considered, stability issues which are making hysteretic operation should be c...
Analysis of the Memristor-Based Crossbar Synapse for Neuromorphic Systems [0.03%]
基于忆阻器的神经形态系统的交叉突触分析
Bokyung Kim,Sumin Jo,Wookyung Sun et al.
Bokyung Kim et al.
In this study, we analyzed the memristor device typically used as a synapse in neuromorphic architecture and confirmed that the synaptic memristor device can be adopted to perform the machine learning algorithm. The nonlinear characteristic...
Co₃O₄/Au Hybrid Nanostructures as Efficient Peroxidase Mimics for Colorimetric Biosensing [0.03%]
高效的类过氧化物酶纳米杂化结构用于比色生物传感检测
Ji Seon Kim,Ji Yeon Jang,Hong Jae Cheon et al.
Ji Seon Kim et al.
Nanomaterials with enzyme-like characteristics (nanozymes) have emerged as potential replacements for natural enzymes due to their potential to overcome several critical limitations of natural enzymes, including low stability as well as hig...
Ecoflex-Passivated Graphene-Yarn Composite for a Highly Conductive and Stretchable Strain Sensor [0.03%]
EcoFlex包覆的石墨烯-纱线复合材料用于高灵敏可拉伸应变传感器
Wonkyeong Son,Kyu-Beom Kim,Sangmin Lee et al.
Wonkyeong Son et al.
We present a flexible strain sensor based on a graphene-yarn composite obtained by spray coating of graphene nanoplates. To improve the stretchability, graphene nanoplates were spray-coated instead of dip-coated on pre-stretched yarn. The s...
Property Optimization of the Micro-Bolometer Array Designed by Associating Noise Equivalent Temperature Difference and Resistance Equation [0.03%]
基于噪声等效温差和电阻方程的微测辐射热计性能优化方法研究
Wan-Gyu Lee,Ho-Seung Jeon
Wan-Gyu Lee
We present how to optimize efficiently the performance of micro-bolometer array with design parameters such as active area and channel length, and minimize simultaneously the channel resistance of bolometer array with a minimum channel area...