Quasi-Three-Dimensional Computations of the Microscopic Thermal and Dielectric Characteristics of an SF6 Rotating Switching Arc [0.03%]
六氟化硫旋转灭弧微细区域的热、介电特性的准三维计算
Youn-Jea Kim,Jong-Chul Lee
Youn-Jea Kim
Pure sulfur hexafluoride (SF6) is chemically inert, non-flammable, non-toxic and thermally stable, and it has excellent dielectric strength and arc-quenching and control properties. The switching-off process of SF6 arc discharges occurs at ...
On-Chip Gate Electrostatic Discharge Protection Design for 900 V Power Metal Oxide Semiconductor Field Effect Transistor Using Punch-Through Diode Without Degrading Switching Loss [0.03%]
基于 punch-through 二极管的高耐压功率 MOSFET 集成栅氧 ESD 保护电路设计
Seongbin Kim,Sinsu Kyoung
Seongbin Kim
In order to protect the gate oxide from electrostatic discharge (ESD) in power MOSFET, the on-chip ESD protection circuits are required. Zener diode on poly silicon gate was normally used in power device because Zener diode structure was ea...
An Online Learning Method Using Spike-Timing Dependent Plasticity for Neuromorphic Systems [0.03%]
基于脉冲时间依赖可塑性的神经形态系统的在线学习方法研究
Sungmin Hwang,Hyungjin Kim,Min-Woo Kwon et al.
Sungmin Hwang et al.
In this study, we proposed an online learning method using spike-timing dependent plasticity (STDP) whose operation is analogous to gradient descent, the most successful learning algorithm for nonspiking artificial neural networks (ANNs). W...
Device Optimization of Nano-Plate Transistors for 3.5 nm Technology Node [0.03%]
面向3.5nm节点纳平板晶体管的器件优化方法研究
Juhyun Kim,Myunggon Kang,Jongwook Jeon et al.
Juhyun Kim et al.
In this paper, lateral gate-all-around nano-plate transistors (NP-FETs) for 3.5 nm technology node were optimized and compared with other nodes such as 7 nm and 5 nm node devices. The transistors' electrostatic was analyzed using a 3D TCAD ...
Analysis of Minority Carrier Lifetime Dependence on Dual Gate Feedback Field Effect Transistor [0.03%]
双栅反馈场效应晶体管中少数载流子寿命的分析
Kyungchul Park,Min-Woo Kwon,Myung-Hyun Baek et al.
Kyungchul Park et al.
In this paper, we investigated the dependence of minority carrier lifetime on dual gate FBFET. Generally, depending on the channel condition or trap density, the lifetime of minority carrier can be degraded. Since the potential barrier lowe...
Design Optimization of InGaAs/GaAsSb-Based P-Type Gate-All-Around Arch-Shaped Tunneling Field-Effect Transistor [0.03%]
基于InGaAs/GaAsSb的p型栅全环拱形隧穿场效应晶体管结构优化
Bo Gyeong Kim,Jae Hwa Seo,Young Jun Yoon et al.
Bo Gyeong Kim et al.
In this work, an InGaAs/GaAsSb-based P-type gate-all-around (GAA) arch-shaped tunneling fieldeffect transistor (TFET) was designed and analyzed using technology computer-aided design (TCAD) simulations. The device performance was investigat...
Simulation for Electrical Performances of the Capacitorless Dynamic Random Access Memory Based on Junctionless FinFETs [0.03%]
基于无节结finfets的电容式动态随机存储器的性能仿真研究
Min Su Cho,Young Jun Yoon,Bo Gyeong Kim et al.
Min Su Cho et al.
This paper report a junctionless fin-type field-effect-transistor based capacitorless dynamic random access memory using three-dimensional technology computer-aided design simulations. The proposed 1T-DRAM is made up of a silicon germanium ...
Si/Ge Hetero Tunnel Field-Effect Transistor with Junctionless Channel Based on Nanowire [0.03%]
基于纳米线的无结掺杂硅锗隧穿场效应晶体管
Ju Chan Lee,Tae Jun Ahn,Yun Seop Yu
Ju Chan Lee
A Si/Ge hetero tunnel field-effect transistor (TFET) with junctionless channel based on nanowire (JLNW-TFET) is proposed, and its electrical performance and dependency of natural parameters are investigated. The JLNW-TFET is operated by com...
Taejin Jang,Myung-Hyun Baek,Min-Woo Kwon et al.
Taejin Jang et al.
In this paper, we analyze hot carrier injection (HCI) in an asymmetric dual gate structure with a charge storage layer. In a floating gate device, holes injected by HCI can move freely in the valence band, since the channel potential is con...
Power-Efficient Nonvolatile Ternary Content Addressable Memory with Flexible Search Scope Using Reconfigurable Match Line Segment and Selective Search Line [0.03%]
一种基于可重构匹配线段和选择性搜索线的灵活查找范围的节能非易失三级内容寻址存储器
Cheol Kim,Sung-Gi Ahn,Jisu Min et al.
Cheol Kim et al.
This paper proposes a nonvolatile-based Ternary Content Addressable Memory (nvTCAM) with efficient dynamic power. The selective search line technique reduces the unnecessary power consumption by designating the search range according to the...