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期刊名:Advanced materials

缩写:ADV MATER

ISSN:0935-9648

e-ISSN:1521-4095

IF/分区:26.8/Q1

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共收录本刊相关文章索引24364
Clinical Trial Case Reports Meta-Analysis RCT Review Systematic Review
Classical Article Case Reports Clinical Study Clinical Trial Clinical Trial Protocol Comment Comparative Study Editorial Guideline Letter Meta-Analysis Multicenter Study Observational Study Randomized Controlled Trial Review Systematic Review
Changjiang Shi,Haihua Zhang,Haolun Li et al. Changjiang Shi et al.
Blue-green lasers are essential for next-generation optoelectronics. While GaN-InGaN lasers offer excellent performance, their complex fabrication and challenges in precise bandgap tuning remain significant limitations. Hybrid lead halide p...
Qingbin Jiang,Huifang Xu,Kwan San Hui et al. Qingbin Jiang et al.
Defect engineering in MoS2 via sulfur vacancies (Vs-MoS2) has shown potential in enhancing lithium-sulfur battery (LSB) performance by mitigating the polysulfide shuttle effect. However, the high surface energy of Vs-MoS2 impedes long-term ...
Hongfei Huang,Lijie Sun,Yalin Zhang et al. Hongfei Huang et al.
As the key materials for next-generation wearable and flexible electronics, ionogels are expected to combine excellent mechanical performance, efficient room-temperature self-healing, and facile processability. Current ionogels typically fa...
Hee Seong Yun,Dayan Wei,Sungjun Yang et al. Hee Seong Yun et al.
Physical unclonable functions (PUFs)-a hardware-based security device using randomness-have evolved from basic integrated circuit designs to advanced systems using diverse materials and mechanisms. However, most PUFs are limited by single-f...
Teng Li,Xiaoyu He,Jia Yang et al. Teng Li et al.
Two-dimensional (2D) materials, with their atomic-layer thickness and exceptional properties, have garnered significant attention for next-generation integrated circuits. Among these, 2D antimony (Sb)-based materials distinguish themselves ...
Mingrui Liu,Dan Li,Zhongran Liu et al. Mingrui Liu et al.
Wurtzite-type nitride ferroelectrics emerge as a breakthrough platform for silicon-compatible nonvolatile memory technology. However, the inherent polarization reversal mechanisms involving diatomic displacements introduce complex domain dy...
Omar Concepción,Ambrishkumar J Devaiya,Marvin H Zoellner et al. Omar Concepción et al.
The successful demonstration of (Si)Ge1-xSnx alloys as direct-gap materials for infrared lasers has driven intense research on group IV-based devices for nanoelectronics, energy harvesting, and quantum computing applications. The material p...
Xinyue Li,Zhaowei Xu,Rongmei Zhao et al. Xinyue Li et al.
Interface engineering in inverted perovskite solar cells (PSCs) faces critical challenges arising from nonideal interfacial contact, defect accumulation, impeded carrier transport, and energy-level misalignment between the perovskite and el...
Mengqi Zhang,Pan Wang,Xianghui Liu et al. Mengqi Zhang et al.
Responsive metasurfaces can efficiently control the propagation and spectral properties of electromagnetic (EM) waves, emerging as an attractive technology in energy and information fields. However, achieving non-interference manipulation o...
Yang You,Mengrui Liu,Na Yan et al. Yang You et al.
Extracellular vesicles (EVs) are vesicle-like structures secreted by various cell types, playing a crucial role in cell communication. As an efficient and safe therapeutic carrier, EVs offer new insights and methods for disease treatment an...