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期刊名：Quality and reliability engineering international

缩写：QUAL RELIAB ENG INT

ISSN：0748-8017

e-ISSN：1099-1638

IF/分区：2.8/Q2

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共收录本刊相关文章索引2301条
Clinical Trial Case Reports Meta-Analysis RCT Review Systematic Review
Classical Article Case Reports Clinical Study Clinical Trial Clinical Trial Protocol Comment Comparative Study Editorial Guideline Letter Meta-Analysis Multicenter Study Observational Study Randomized Controlled Trial Review Systematic Review
Critical area analysis for design-based yield improvement of vlsi circuits [0.03%]
Doris Schmitt-Landsiedel; Doris Keitel-Schulz; Jitendra Khare; Susanne Griep; Wojciech Maly Doris Schmitt-Landsiedel; Doris Keitel-Schulz; Jitendra Khare; Susanne Griep; Wojciech Maly
Quality and reliability engineering international. 1995;11(4):227-232. DOI:10.1002/qre.4680110403 1995
Upper voltage and temperature limitations of stress conditions for relevant dielectric breakdown projections [0.03%]
R.-P. Vollertsen; W. W. Abadeer R.-P. Vollertsen; W. W. Abadeer
Quality and reliability engineering international. 1995;11(4):233-238. DOI:10.1002/qre.4680110404 1995
Write/erase degradation and disturb effects in source-side injection flash eeprom devices [0.03%]
Dirk Wellekens; Jan van Houdt; Guido Groeseneken; Herman E. Maes; Lorenzo Faraone Dirk Wellekens; Jan van Houdt; Guido Groeseneken; Herman E. Maes; Lorenzo Faraone
Quality and reliability engineering international. 1995;11(4):239-246. DOI:10.1002/qre.4680110405 1995
Optical ammeter for integrated circuit characterization and failure analysis [0.03%]
W. Claeys; S. Dilhaire; D. Lewis; V. Quintard; T. Phan; J. L. Aucouturier W. Claeys; S. Dilhaire; D. Lewis; V. Quintard; T. Phan; J. L. Aucouturier
Quality and reliability engineering international. 1995;11(4):247-251. DOI:10.1002/qre.4680110406 1995
Voltage contrast studies on 0·5 μm integrated circuits by scanning force microscopy [0.03%]
Christoph Böhm; Jörg Sprengepiel; Erich Kubalek Christoph Böhm; Jörg Sprengepiel; Erich Kubalek
Quality and reliability engineering international. 1995;11(4):253-256. DOI:10.1002/qre.4680110407 1995
Frequency dependence of degradation and breakdown of thin SiO2 films [0.03%]
M. Nafria; D. Yelamos; J. Suñe; X. Aymerich M. Nafria; D. Yelamos; J. Suñe; X. Aymerich
Quality and reliability engineering international. 1995;11(4):257-261. DOI:10.1002/qre.4680110408 1995
A method for the calculation of the softerror rate of sub-μm dynamic logic cmos circuits [0.03%]
T. Juhnke; M.-P. Bringmann; H. Klar T. Juhnke; M.-P. Bringmann; H. Klar
Quality and reliability engineering international. 1995;11(4):263-268. DOI:10.1002/qre.4680110409 1995
Hot-carrier reliability lifetimes as predicted by Berkeley's model [0.03%]
Alan Meehan; Paula O'Sullivan; Paul Hurley; Alan Mathewson Alan Meehan; Paula O'Sullivan; Paul Hurley; Alan Mathewson
Quality and reliability engineering international. 1995;11(4):269-272. DOI:10.1002/qre.4680110410 1995
Evaluation of the hot-carrier-induced offset voltage of differential pairs in analogue CMOS circuits [0.03%]
Roland Thewes; Michael J. Kivi; Karl F. Goser; Werner Weber Roland Thewes; Michael J. Kivi; Karl F. Goser; Werner Weber
Quality and reliability engineering international. 1995;11(4):273-277. DOI:10.1002/qre.4680110411 1995
Shape changes of voids in bamboo lines: A new electromigration failure mechanism [0.03%]
O. Kraft; U. E. Möckl; E. Arzt O. Kraft; U. E. Möckl; E. Arzt
Quality and reliability engineering international. 1995;11(4):279-283. DOI:10.1002/qre.4680110412 1995