Schottky barrier SOI-MOSFETs with high-k La(2)O(3)/ZrO(2) gate dielectrics [0.03%]
具有高K La(2)O(3)/ZrO(2)栅介质的肖特基势垒SOI-MOSFET晶体管
C Henkel,S Abermann,O Bethge et al.
C Henkel et al.
Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N'-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate ...