Characterization of negative differential resistance in asymmetric nanopores obtained from two soluble electrolytes [0.03%]
两种可溶电解质获得的不对称纳米孔中负微分电阻的表征
Patricio Ramirez,Sergio Portillo,Salvador Mafe et al.
Patricio Ramirez et al.
Negative differential resistance (NDR) phenomena in nanofluidic diodes are characterized by a decrease in the electrical current with the increase in the transmembrane potential beyond a system-dependent threshold voltage. Here, we describe...
Negative Differential Resistance and Ion Emission from The Taylor Cone of Undiluted Ionic Liquid Generated by a Voltage-Driven High-Pressure Electrospray [0.03%]
纯离子液在电压驱动高压电喷中的泰勒锥的负阻特性及离子发射现象研究
Takeshi Matsuda,Lee Chuin Chen
Takeshi Matsuda
The characteristics of the spray current, flow rate, effect of ambient gas pressure, and generated ion species from the Taylor cone of an undiluted ionic liquid (1-ethyl-3-methylimidazolium tetrafluoroborate, Emim-BF4) are investigated usin...
Resonant Tunneling Nanostructures: Eliminating Current Saturation on Negative Differential Conductivity Region in Compact Dissipative Simulations [0.03%]
紧凑耗散仿真中纳米共振隧穿器件负 differential 电阻区的电流饱和现象及其消除
Natalia Vetrova,Evgeny Kuimov,Sergey Meshkov et al.
Natalia Vetrova et al.
A solution to the problem of resonant tunneling current saturation is proposed. This problem does not allow, within the traditional compact models, a correct qualitative and quantitative analysis to be carried out of the volt-ampere charact...
Negative Differential Resistance Device with High Peak-to-Valley Ratio Realized by Subband Resonant Tunneling of Γ-Valley Carriers in WSe2/ h-BN/WSe2 Junctions [0.03%]
实现Γ谷能带共振隧穿的二硫化钨/六硼烷/二硫化钨负阻器件
Kei Kinoshita,Rai Moriya,Seiya Kawasaki et al.
Kei Kinoshita et al.
Resonant tunneling diodes (RTDs) are a core technology in III-V semiconductor devices. The realization of high-performance RTD using two-dimensional (2D) materials has been long awaited, but it has yet to be accomplished. To this end, we in...
Molecular switching by proton-coupled electron transport drives giant negative differential resistance [0.03%]
质子耦合电子运输驱动的分子开关产生巨大的负微分电阻现象
Qian Zhang,Yulong Wang,Cameron Nickle et al.
Qian Zhang et al.
To develop new types of dynamic molecular devices with atomic-scale control over electronic function, new types of molecular switches are needed with time-dependent switching probabilities. We report such a molecular switch based on proton-...
Unveiling Negative Differential Resistance and Superionic Conductivity: Water Anchored on Layered Materials [0.03%]
揭开负微分电阻和超离子电导率的神秘面纱：层状材料体系中的局域水分子及其作用
Litty Thomas Manamel,Arunima Singh,Puranjay Saha et al.
Litty Thomas Manamel et al.
Unravelling the perplexing nature of negative differential resistance (NDR) in 2D transition metal dichalcogenide (2D TMD) devices, especially regarding intrinsic properties, is hindered by experiments conducted in ambient environments. A t...
Negative Differential Resistance in Conical Nanopore Iontronic Memristors [0.03%]
锥形纳米孔离子器件忆阻器中的负差分电阻现象
Ruoyu Yang,Yusuff Balogun,Sarah Ake et al.
Ruoyu Yang et al.
Emerging ion transport dynamics with memory effects at nanoscale solution-substrate interfaces offers a unique opportunity to overcome the bottlenecks in traditional computational architectures, trade-offs in selectivity and throughput in s...
Junctionless Negative-Differential-Resistance Device Using 2D Van-Der-Waals Layered Materials for Ternary Parallel Computing [0.03%]
使用二维范德华层状材料的无结负微分电阻设备用于三进制并行计算
Taeran Lee,Kil-Su Jung,Seunghwan Seo et al.
Taeran Lee et al.
Negative-differential-resistance (NDR) devices offer a promising pathway for developing future computing technologies characterized by exceptionally low energy consumption, especially multivalued logic computing. Nevertheless, conventional ...
Room Temperature Negative Differential Resistance with High Peak Current in MoS2/WSe2 Heterostructures [0.03%]
二硫化钼/二硒化钨异质结构中具有高峰值电流的室温负差分电阻
Jung Ho Kim,Soumya Sarkar,Yan Wang et al.
Jung Ho Kim et al.
Two-dimensional transition metal dichalcogenide (2D TMD) semiconductors allow facile integration of p- and n-type materials without a lattice mismatch. Here, we demonstrate gate-tunable n- and p-type junctions based on vertical heterostruct...
Light-Triggerable and Gate-Tunable Negative Differential Resistance in Small Molecules Heterojunction [0.03%]
小分子异质结中的光触发和可调负微分电阻效应
Seongjae Kim,Yunchae Jeon,Eun Kwang Lee et al.
Seongjae Kim et al.
Negative differential resistance (NDR), a phenomenon in which the current decreases when the applied voltage is increased, is attracting attention as a unique electrical property. Here, we propose a broad spectral photo/gate cotunable chann...
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