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Chinese Physics Letters. 2014;31(7):077201-. doi: 10.1088/0256-307x/31/7/077201 Q14.22025

Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance

Wang, Ji-Min; Zhang, Xiao-Zhong; Piao, Hong-Guang; Luo, Zhao-Chu; Xiong, Cheng-Yue

DOI: 10.1088/0256-307x/31/7/077201

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Copyright © Chinese Physics Letters. 中文内容为AI机器翻译,仅供参考!

期刊名:Chinese physics letters

缩写:CHINESE PHYS LETT

ISSN:0256-307X

e-ISSN:1741-3540

IF/分区:4.2/Q1

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Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance