Chinese Physics Letters. 2014;31(7):077201-. doi: 10.1088/0256-307x/31/7/077201 Q14.22025
Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance
DOI: 10.1088/0256-307x/31/7/077201
摘要
Chinese Physics Letters. 2014;31(7):077201-. doi: 10.1088/0256-307x/31/7/077201 Q14.22025
DOI: 10.1088/0256-307x/31/7/077201
摘要