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Chinese Physics Letters. 2014;31(6):068502-. doi: 10.1088/0256-307X/31/6/068502 Q14.22025

High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes

高压AlGaN/GaN基横向肖特基势垒二极管

Kang, He; Wang, Quan; Xiao, Hong-Ling; Wang, Cui-Mei; Jiang, Li-Juan; Feng, Chun; Chen, Hong; Yin, Hai-Bo; Wang, Xiao-Liang; Wang, Zhan-Guo; Hou, Xun

DOI: 10.1088/0256-307X/31/6/068502

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Copyright © Chinese Physics Letters. 中文内容为AI机器翻译,仅供参考!

期刊名:Chinese physics letters

缩写:CHINESE PHYS LETT

ISSN:0256-307X

e-ISSN:1741-3540

IF/分区:4.2/Q1

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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes