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Chinese Physics Letters. 2004;21(9):1825-1827. doi: 10.1088/0256-307X/21/9/042 Q14.22025

GaN Growth with Low-Temperature GaN Buffer Layers Directly on Si(111) by Hydride Vapour Phase Epitaxy

Hui-Qiang, Yu; Lin, Chen; Rong, Zhang; Xiang-Qian, Xiu; Zi-Li, Xie; Yu-Da, Ye; Shu-Lin, Gu; Bo, Shen; Yi, Shi; You-Dou, Zheng

DOI: 10.1088/0256-307X/21/9/042

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Copyright © Chinese Physics Letters. 中文内容为AI机器翻译,仅供参考!

期刊名:Chinese physics letters

缩写:CHINESE PHYS LETT

ISSN:0256-307X

e-ISSN:1741-3540

IF/分区:4.2/Q1

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GaN Growth with Low-Temperature GaN Buffer Layers Directly on Si(111) by Hydride Vapour Phase Epitaxy