首页 正文

Chinese Physics Letters. 2014;31(2):027702-. doi: 10.1088/0256-307X/31/2/027702 Q14.22025

Band Alignment and Band Gap Characterization of La 2 O 3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering

采用射频磁控溅射法在硅衬底上生长的La₂O₃薄膜的能带对齐与禁带特性表征

Liu, Qi-Ya; Fang, Ze-Bo; Ji, Ting; Liu, Shi-Yan; Tan, Yong-Sheng; Chen, Jia-Jun; Zhu, Yan-Yan

DOI: 10.1088/0256-307X/31/2/027702

摘要 查看摘要

Copyright © Chinese Physics Letters. 中文内容为AI机器翻译,仅供参考!

期刊名:Chinese physics letters

缩写:CHINESE PHYS LETT

ISSN:0256-307X

e-ISSN:1741-3540

IF/分区:4.2/Q1

文章目录 更多期刊信息

全文链接
引文链接
复制
已复制!
推荐内容
Band Alignment and Band Gap Characterization of La 2 O 3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering