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Chinese Physics Letters. 2008;25(4):1476-1478. doi: 10.1088/0256-307X/25/4/084 Q14.22025

Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method

MOCVD法制备的铁掺杂GaN稀磁半导体的光学与磁学特性

Zhi-Kuo, Tao; Rong, Zhang; Xu-Gao, Cui; Xiang-Qian, Xiu; Guo-Yu, Zhang; Zi-Li, Xie; Shu-Lin, Gu; Yi, Shi; You-Dou, Zheng

DOI: 10.1088/0256-307X/25/4/084

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Copyright © Chinese Physics Letters. 中文内容为AI机器翻译,仅供参考!

期刊名:Chinese physics letters

缩写:CHINESE PHYS LETT

ISSN:0256-307X

e-ISSN:1741-3540

IF/分区:4.2/Q1

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Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method