Chinese Physics Letters. 2011;28(5):057102-. doi: 10.1088/0256-307X/28/5/057102 Q14.22025

Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD

采用MOCVD方法在硅衬底上生长的带叠层AlGaN/AlN中间层的改进型AlGaN/GaN HEMT

DOI: 10.1088/0256-307X/28/5/057102

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