IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 2015;23(2):266-279. doi: 10.1109/TVLSI.2014.2306959 Q23.22025

Actively Alleviate Power Gating-Induced Power/Ground Noise Using Parasitic Capacitance of On-Chip Memories in MPSoC

利用片上存储器的寄生电容，主动缓解多核片上系统中电源门控引起的电源/地噪声。

DOI: 10.1109/TVLSI.2014.2306959

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